摘要
通过阴极还原在纳米TiO2膜上电沉积Cu2O,获得了p-Cu2O／n-TiO2异质结电极．研究了沉积温度对Cu2O膜厚、纯度和形貌的影响,制备出纯度较高、粒径为40-50nm的Cu2O 薄膜．纳米Cu2O膜在200℃烧结后透光性最好,禁带宽度为2．06eV．光电化学测试表明纳米 p-Cu2O／n-TiO2异质结电极呈现较强的n-型光电流响应并且能够提高光电转换效率．
This paper introduced the electrochemical deposition of Cu2O thin films on TiO2 films by cathodic reduction to form p-Cu2O/n-TiO2 heterostructure electrode. The effects of bath temperature on film thickness, purity and morphology of Cu2O films were studied. Pure spherically shaped Cu2O grains with 40-50nm diameter were obtained. It is found that annealing at 200℃ can improve the spectral transmittance of the Cu2O film and the film has a band gap of 2.06eV. The measurements of photoelectrochemical behavior of the nanocrystalline p-Cu2O/n- TiO2 heterostructure electrode show that such heterostructure electrode produces strong n-type spectral response and can improve the photoelectron conversion efficiency.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第2期453-458,共6页
Journal of Inorganic Materials
基金
国家自然科学基金(20207002)教育部留学回国人员科研启动基金
关键词
氧化亚铜薄膜
二氧化钛膜
异质结电极
光电化学
cuprous oxide thin film
TiO2 film
heterojunction electrode
photoelectrochemistry
