摘要
用X射线双晶衍射方法对MBE方法生长的InGaAs／GaAs量子阱结构卡才料进行了测试分析。结果表明,在材料生长过程中,深能级的引入严重影响了材料的光学特性及界面完整性。通过改变衬底温度、Ⅴ／Ⅲ速流比等实验条件,得到了质量较好的材料。同时对实验样品的双晶衍射回摆曲线中干涉条纹及峰的劈裂现缘进行了理论分析。
High quality InGaAs/GaAs quantum well （QW） structure grown by molecular beam epitaxy （MBE） is characterized by X-ray double crystal diffraction. Interference fringes and splitting peaks in double crystal rocking curves are analyzed. The deep energy levels affecting the characteristics of materials and lasers are also discussed. The experimental results show that the use of X-ray double crystal diffraction is very important in testing the quality of quantum wells and improving the MBE technology.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第2期105-107,共3页
Semiconductor Technology
基金
国家自然基金项目(50375050
50405025)
