摘要
介绍了微波PIN开关的电磁结构模型的建立及计算机仿真，讨论了宽带单刀多掷开关的设计要点。采用该方法成功设计了1—18GHz吸收式单刀五掷开关，其插损≤3．5dB．驻波≤2．2，隔离度≥60dB。
The constructions of the EM structural model of microwave PIN switches and computerized simulation are introduced The key points of design phase of the broadband switch are discussed. An absorptive, single-pole five-throw switch at 1 - 18GHz is designed . The main performances of an insertion loss of less than or equal to 3.5dB , the VSWR of less than or equal to 2.2, and the isolation of more than or equal to 60dB are obtained.
出处
《雷达与对抗》
2005年第4期54-56,共3页
Radar & ECM
关键词
微波PIN开关
单刀多掷开关
仿真
microwave PIN swtich
single-pole multi-throw switch
simulation
