摘要
根据硅粉纯化的要求,提供了一种长落程和高反应速率的冷等离体反应器。工艺参数的选择着重于增大鞘层厚度、提高反应粒子浓度和控制抽气速率,因此,能有效的提高纯化反应的速率、粉料的回收率和粉粒一次沉降的时间。实验结果表明:该设备能将纯度为99%的工业硅纯化为约99.99%的太阳级硅。
According to the purity requirement for Si powder, a cold plasma reaction chamber with long drop distance and high reaction rate is provided in the paper. In the selection of technology parameter, we put stress on increasing the thickness of sheath, raising the densities of reaction particles, and controlling the speed of pump. The purifying rate, collective ratio, and drop time of Si powder were raised effectively as a consequence of these selections. The experimental results show that solar grade Si （4N） can be gotten from industrial Si （Melatturgical grade Si-2N） in the plasma system.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2005年第10期1653-1656,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金资助项目(10265002)
关键词
等离子体纯化
纯化反应
表面刻蚀
plasma purification
purity reaction
surface etching
