摘要
文章研究了采用氩气和氦气作携带气体时气体流量对刻蚀速率、均匀性和选择比等主要刻蚀参数的影响。实验结果表明,当采用氩气作携带气体时,其流量选择在氩气∶刻蚀气体≈1∶1时,刻蚀结果优化;当选择氦气作携带气体时,其流量选择在氦气∶刻蚀气体≈2∶1时,刻蚀结果优化。氩气和氦气相比,氩气更具优越性。
Argon and helium are often used as gas carriers in dry etching of silicon dioxide. Effects of argon or/ and helium on the etching rate, uniformity, and selectivity to different substrate materials are investigated, Experiments show that, when argon is used to obtain an optimized etching, the flux ratio of argon and reactive gases should be adjusted to approximately 1 ： 1, On the other hand, when helium is used, a 2 ： 1 ratio is preferable. Compared with helium, argon is believed to be a better gas carrier.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第5期456-460,共5页
Microelectronics
