摘要
根据光开关对量子阱材料的要求,提出了具体的量子阱结构优化原则。以准对称耦合量子阱为蓝本,利用此优化原则,对其结构进行优化。通过对优化后的准对称耦合量子阱电光特性的分析,发现该量子阱结构在低工作电压(F=40 kV/cm)、低吸收系数(α<100 cm-1)的情况下仍有一很大的场致折射率变化(对TE模入射光,(Δn)max=0.021 6;对TM模入射光,(Δn)max=0.033),从而验证了优化程序的正确性。
Based on the demands of optical switches for quantum well material, the detailed optimization principles for quantum well structure are put forward. Using the optimization principles, the structure of quasi-symmetric coupled quantum-well is optimized. By analyzing the electro-optical properties of the optimized quasi-symmetric coupled quantum well, we find that the quasi-symmetric coupled quantum well can produce a large field-induced refractive index change （for TE mode, （Δn）max=0. 021 6; for TM mode, （Δn）max=0.033） in the case of low electric field （F=40 kV/cm） and low absorption loss （a〈100 cm^-1）, this validate our optimal process.
出处
《浙江科技学院学报》
CAS
2005年第3期175-178,共4页
Journal of Zhejiang University of Science and Technology
基金
国家自然科学基金资助项目(60277034)
关键词
准对称耦合量子阱
光开关
优化设计
电光特性
quasi-symmetric coupled quantum well
optical switch
optimal design
electrooptical properties
