摘要
采用平均键能理论结合形变势方法对由ＡＩＳｂ，ＧａＳｂ和ＩｎＳｂ所构成的应变超晶格界面在任意应变状态下的价带偏移值进行了确定，并分析了阳离子浅ｄ轨道对价带偏移值的影响．结果表明，它们的价带偏移值具有显著的应变效应，此一显著的应变效应来源于应变的单轴分量及其与自旋－轨道分裂能量的耦合．这一效应导致了ＡＩＳｂ－ｌｎＳｂ和ＧａＳｂ－ＩｎＳｂ系统中最高价带排列的Ⅰ－Ⅱ型超晶格的转变．
A theoretical determination is reported for the valence-band offset atstrained-layer superlattice interfaces AISb-GaSb,AISb-InSb and GaSb-InSb by combining theaverage bond energy theory and deformation potential method.The effect of the sballow d-orbitals in Ga and In atoms on the valence-band offset is discussed.It is shown that the valence-band offsets at these interface systems are remarkably dependent on the strain condition. Thechange of the valence-band offset is mainly due to the effects of the uniaxial component of thestrain and its interaction with the spin-orbit splitting, which lead to the type-Ⅰand type-Ⅱ transition for the topmost valence state in AISb-InSb and GaSb-InSb.Good agreement is foundbetweeh the present result and available relevant experimental data.
出处
《厦门大学学报（自然科学版）》
CSCD
北大核心
1995年第6期918-923,共6页
Journal of Xiamen University：Natural Science
基金
国家和福健省自然科学基金
关键词
应变层超晶格
价带偏移
半导体
Strained-layer superlattice
valence-band offset
