摘要
本文从熔体组分挥发产生杂质这一观点出发，研究了二元化合物Ａ＿ｍ＿Ｂｎ熔体中的杂质产生率以及过剩组分杂质在熔体和晶体中的浓度，并导出了浓度分布的数学表达式，分析了组分挥发对熔体提拉法晶体生长的影响，并对其结果进行了讨论。
The impurity productivity in the melt of binary compound A_mB_n,as well as the concentration of the surplus composition impurity in the melt and crystal has been studied in this paper with the viewpoint that composition volatility produces impurity. The mathematical expression of the concentration distribution has also been derived.The effect of the composition volatility on the crystal grown by melt pulling method is investigated and results are also discussed.
出处
《人工晶体学报》
EI
CAS
CSCD
1995年第1期59-63,共5页
Journal of Synthetic Crystals
关键词
晶体生长
组分挥发
杂质
熔体
提拉法
crystal pulling
impurity
composition volatility
composition impurity
impurity productivity
impurity concentration
