摘要
采用低能离子束辅助沉积技术在Si片上制备了TiN纳米薄膜。考察了离子束流密度和基底温度对薄膜性能的影响。研究表明:随着离子束流密度的增大,TiN薄膜的纳米硬度上升,膜基结合力变化不大,薄膜的耐磨性获得了很大改善;制膜时的基底温度升高,薄膜的硬度也会上升,但膜基结合力下降,摩擦系数增大,薄膜的耐磨性下降。
TiN Nano-film was prepared on Si wafer by low-energy ion beam aided deposition technique. The effect of ion beam flux density and the temperature of Si substrate on the properties of the film was investigated. The results show that the nano-hardness and the wear resistance of the film increase with an increase in ion beam flux density although the film-substrate bonding strength varied little.However, with the temperature of Si substrate increasing, the film-substrate bonding strength and wear resistance of the film decrease although its nano-hardness increases.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2005年第4期534-536,共3页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目(50323007
50172052)
