摘要
以在Ｎ型单晶硅表面１．３μｍ内实现理想平台状Ｐ型载流于分布为例，我们实验研究了多能离子注入形成特殊形状载流子分布的Ｐｅａｒｓｏｎ函数拟合叠加的计算机设计方法．首先，用扩展电阻法（ＳＲＰ）测量高温快速热退火（ＲＴＡ）后的载流子分布，对０．５—２．４ＭｅＶ能量范围内单能硼离子注入单晶硅的研究表明，Ｐｅａｒｓｏｎ函数分布比半高斯函数分布更好地符合实验所测的载流子分布．给出了投影射程凡、射程歧离σ、偏斜度γ和峭度β对能量的依赖关系．还由双能离于注入研究了注入顺序对分布的峰位和峰高的影响及两个单能分布线性叠加的条件．文中给出的接器件要求设计平台分布的离子束参数，与实验结果符合很好．
Abstract For the propose of design device,a method of formation of special shaped carrier distribution by MeV multi energy boron ion implantation into crystal silicon was studied.After 0.5-2.4MeV B ion implantation into crystal Si and after 1070℃、20s RTA treatments,the carrier concentration profiles from SRP measurements were obtained.As the starting point,single-energy ion implantation and double-energy ion implantation was studied.Pearson and half-Gauss functions were used to fit the carrier concentration profiles of single-energy ion implantation,and the fitting of Pearson function is better than that of the half-Gauss function. The dependence of projected range Rp, range straggling σ,skewness γ and kurtosis β of the measured data on incident energy E were given by polynomials.From the experiments of double-energy ion implantation,the effect of the different implantation sequence was investigated.At last,by using linear superposition of singleenergy ion implantation, an uniform carrier profile was got by multi-energy ion implantation.
基金
高校博士点基金
关键词
高能离子注入
硼
单晶硅
载流子分布
Boron
Electronic voltmeters
Ion implantation
Sputtering
