摘要
介绍了利用逐层生长法(layer by layer)在等离子体化学气相沉积系统中制各纳米硅薄膜。着重介绍制备纳米硅薄膜的沉积过程和生长机制。指出氢基因为制备新技术发展的关键,并且将在今后纳米硅薄膜制备技术发展中起重要作用。
A new technology for preparation of nanocrystalline siliconfilms--layer by layer is introducted. This paper is centered mainly on introducingthe deposition process and growth mechanism of the nc-Si : H films. It is pointed out that hydrogen radical is the key for the developing of the above nc-Si : H deposition tcchnologys and will play important role in the future technology.
出处
《材料导报》
EI
CAS
CSCD
1995年第6期44-50,共7页
Materials Reports
关键词
纳米硅
薄膜
逐层生长法
氢基团
nano-crystalline silicon,layer by layer,hydrogen radical
