摘要
在俄歇电子能谱(AES)仪超高真空分析室中利用氩离子溅射沉积方法将Al沉积在U基体上。对不同Al沉积量的铀表面实时采集AES和低能电子损失谱(EELS),以研究沉积Al原子与U表面原子间的相互作用以及Al膜的生长过程。将实验样品进行退火处理后进行深度剖析。研究结果表明:Al沉积在U基体上是以岛状方式生长的;室温下,沉积Al原子与U表面原子间存在界面作用,两者在界面处相互扩散形成了合金相。退火促使界面扩散速率增大,界面结合力增强,并有可能形成化合物UAlx。
Aluminum thin layers on uranium were prepared by sputter deposition at room temperature in ultra high vacuum analysis chamber. Interaction between U and Al, and growth mode were investigated by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS). It is shown that Al thin film growth follows the volmer-weber(VW) mode. At room temperature, Al and U interact with each other, resulting in interdiffusion action and formation of U-Al alloys at U/Al interface. Annealing promotes interaction and interdiffusion between U and Al, and UAl_x may be formed at interface.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2005年第B07期151-155,共5页
Atomic Energy Science and Technology
关键词
铀
铝薄膜
界面
俄歇电子能谱
uranium
aluminum thin film
interface
Auger electron spectroscopy
