摘要
结合载流子热激发和场致激发的电离理论，对计算电离杂质浓度的物理模型和计算方法进行了修正，由于考虑了载流子的费米统计分布、载流子对杂质电离能的屏蔽作用、ＰｏｏｌｅＦｒｅｎｋｅｌ强场理论和自加热等物理效应的影响，因而可精确描述低温下载流子冻析效应、浅能级杂质的陷阱行为及其对低温器件交直流性能的影响。
The physical model and calculation method of ionized impurity concentrations in semiconductors are modified on the basis of carriers thermal emission and field-enhanced ionization and in consideration of Fermi-Dirac statistics,the carriers screening effect on the ionization energy,Poole-Frenkel high electrical field effect and self-heating effect. This kind of model can describe the carriers freeze-out effect, shallow impurity energy trapping behaviour and their influence on the DC and AC properties of semiconductor devices at low temperature.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第3期228-235,共8页
Research & Progress of SSE
基金
博士点基金
关键词
冻析效应
陷阱效应
半导体器件
Low Temperature, Impurity Ionization, Shallow Impurity Energy,Carriers Freeze-out and Trapping Effect
