摘要
本文研究了硅双极晶体管电流增益和截止频率的低温物理特性，提出了电流增益在低温下将随发射区杂质浓度的下降和基区杂质浓度的上升而上升的新理论，得出了低温下硅中浅能级杂质将起有效陷阱作用的新结论。在上述基础上，本文对发射区、基区和收集区的掺杂分布进行了优化设计，这将成为获得高性能硅低温双极晶体管的重要设计依据和理论基础。
Low temperature physics of current gain and cut-off frequency in silicon bipolar tran-sistors are studied.The new theory that current gain increases with the decrease in emiter doping and the increase in base doping has been proposed.The low temperature trapping effect of shallow dopants is analyzed.Based on the new theory and analysis.doping profiles in the emitter,base and collector are optimized,which makes possible the realization of high performance silicon bipolat transistors for low temperature operation.
出处
《微电子学》
CAS
CSCD
1995年第1期21-28,共8页
Microelectronics
基金
国家自然科学基金"八五"重点资助项目
关键词
低温器件
双极晶体管
硅器件
优化设计
Low temperature device.Bipolar transistor.Silicon device,Design optimization
