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KOH溶液中(110)硅片腐蚀特性的研究 被引量:3

Study on the Characteristics of the (110) Silicon Etched in KOH Solution
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摘要 研究了在KOH溶液中(110)硅片的腐蚀特性,在保证(110)面的平整和{111}面的光滑的腐蚀实验条件下,利用(110)面和{111}面腐蚀选择比大,采用湿法腐蚀技术可以制作高深宽比结构的方式,在(110)硅片上设计制作出光开关用微反射镜。在腐蚀过程中光开关悬臂的凸角处产生了削角现象,利用表面硅原子悬挂键的分布特征对产生削角的原因作了合理解释,这为以后研究凸角补偿提供了理论依据。 The characteristics of the (110) silicon etched in KOH solution is studied. On the experimental condition of the flat etched (110) plane and the smooth {111} planes, the high-respect- ratio structure can be fabricated due to the high etch ratio of the (110) plane to {111} planes. In this way, the micromirror for the optical switch can be fabricated in the (110) silicon. But when the beam of the optical switch is formed, undercut occurs on the convex. And it can be explained by the dangling bonds of the silicon atom, which is the basic theory for the further study of the convex compensation.
出处 《半导体技术》 CAS CSCD 北大核心 2005年第6期52-55,共4页 Semiconductor Technology
基金 国家重点计划863项目(2002AA312023)
关键词 KOH溶液 (110)硅片 凸角 悬挂键 KOH solution (110) silicon convex dangling bonds
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参考文献4

  • 1ENISHI Y, TSUGAI M, MEHREGANY M.Microoptomechanical device fabricated by anisotropic etching of (100)silicon[J]. J Micromech Microeng,1995, 5:305-312. 被引量:1
  • 2PALIK E D, et al. Ellipasometric study of orientationdependent etching of silicon in aqueous KOH[J].J Electrochem. Soc, 1985,132(4):871. 被引量:1
  • 3PALIK E D, et al. Study of the etch-stop mechanism in silicon[J].J Electrochem Soc,1982,129(9):2051. 被引量:1
  • 4CIARLO D R.A latching accelerometer fabricated by the anisotropic etching of (110) oriented silicon wafers[J].J Micromech Microeng, 1992, 2:12-13. 被引量:1

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