摘要
主要针对光刻对准特性,从单项工艺和工艺集成的角度,分析了影响光刻对准的各个主要因素,主要包括对准标记、工艺层、隔离技术等,提出了一些改善光刻对准效果的方法。
The relation of IC manufacture process and lithography alignment are studied. Some key factors, such as alignment masker, process layer and isolation technology are analyzed. The ways of improving the alignment accuracy of photolithography are introduced.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第6期14-17,27,共5页
Semiconductor Technology
关键词
光刻
制造工艺
IC
对准标记
隔离技术
lithography alignment
process layer
IC
lithography process
isolation
