摘要
采用ZYGOMarkⅢ- GPI数字波面干涉仪、NamoScopeⅢa型原子力显微镜对不同氧分压下电子束蒸发方法制备的SiO2 薄膜中的残余应力及表面形貌进行了研究,结果发现:随着氧分压的增大,薄膜中的压应力值逐渐减小,最后变为张应力状态;同时薄膜的表面粗糙度也随着氧分压的增大而逐渐增大 另外,折射率对氧分压也非常敏感,随着氧分压的增大呈现出了减小的趋势 这些现象主要是由于氧分压的改变使得SiO薄膜结构发生了变化引起的。
Thin SiO2 films have been deposited by electron beam evaporation method. The influences of oxygen partial pressure on the mechanical, surface morphology and optical properties were studied. The results show that the residual stress in the SiO2 films varied from compressive stress to tensile stress with the oxygen partial pressure increase, which may be attributed to the evolution of the microstructure. At the same time, the surface roughness became larger and the refractive index decreased with the increase of the oxygen pressure.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2005年第5期742-745,共4页
Acta Photonica Sinica
关键词
SIO2薄膜
氧分压
残余应力
表面形貌
折射率
电子束蒸发
SiO_2 films
Oxygen partial pressure
Residual stress
Surface morphology
Refractive index
Electron beam evaporation
