摘要
研究了γ射线辐照对InGaAs红外探测器性能的影响。γ射线的辐照剂量分别为10Mrad、20Mrad、30Mrad。测量了器件在不同γ辐照剂量下的响应光谱、电流-电压特性、信号、噪声。通过对实验结果的分析,发现器件的响应光谱和信号没有发生明显变化;暗电流和噪声随γ辐照剂量增加而递增,表明探测器的性能随γ辐照剂量的增加而逐步衰减。
Effects of γ irradiation on InGaAs detectors were studied. The dose of γ irradiation ranged from 10 Mrad to 30 Mrad. Response spectrum, current-voltage characterization, signal and noise were measured before and after irradiation to analyze the irradiation effects. After irradiation, the response spectrum and single have no noticeable change. The dark current and noise increases with the irradiation dose increasement, which indicates that performance of the detectors becomes worse with increasing irradiation dose.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2005年第1期68-70,共3页
Journal of Functional Materials and Devices
