摘要
研究了基于 MOSFET偏微分方程 (PDE)模型的电路仿真算法 ,并提出一种求解 PDE的快速算法。当MOSFET PDE模型用于射频 (RF)电路仿真时 ,系统方程为一个耦合系统 ,包括偏微分方程 (PDE)、常微分方程(ODE)和代数方程 (AE)。采用一套迭代算法来求解该耦合系统。将上述的模型和算法用于一个压控振荡器(VCO)的瞬态特性仿真 ,模拟结果与理论分析相符。
In this paper, we present a circuit simulation algorithm based on the partial differential equati on (PDE) model of MOSFETs, together with a fast algorithm for solving the PDE. W hen the PDE model of MOSFETs is applied for circuit simulation, the system equat ion becomes a coupled system, including partial differential equations (PDE), or dinary differential equation (ODE), and algebraic equations (AE). An iterative algorithm is used to solve this coupled system. We adopt the above model and alg orithms to simulate the transient respon se of a voltage controlled oscillator (V CO). The simulation results match well w ith the theoretical analysis.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2005年第1期119-123,137,共6页
Research & Progress of SSE
