摘要
本文用ＭｏｎｔｅＣａｒｌｏ方法模拟了１－１０ｋｅＶ的入射电子与固体Ｓｉ的相互作用，在模拟中还对体内的二次电子进行跟踪。对出射二次电子在样品表面的分布进行了多重分形研究。随入射电子能量增大，多重分形谱高度下降，多重分形谱主要向低奇异指数方向扩展。
Monte Carlo simulation of interaction of 1-10keV incident electrons with Si target has been made。In thesimulation,the trajectories of secondary electrons inside the target have been included.The surface distribu-tions of emitted secondary electrons show the multifractal characteristics.With increasing energy of the incidentelectron,the height (fractal dimension)of the multifractal spectrum decreases and the multifractal spectrum ex-pand to direction of small coefficient of singularity。
出处
《电子显微学报》
CAS
CSCD
1994年第3期213-216,共4页
Journal of Chinese Electron Microscopy Society
基金
国家教委"优秀青年教师基金"和国家自然科学基金
