摘要
本文用TEM技术系统地研究了超高真空中在Si(111)衬底上交替蒸镀Co、Si形成的多层薄膜,在稳态热退火过程中硅化物的生长规律,观察生成硅化物的成分和晶粒度、薄膜的表面形态和界面特征等微结构的变化。结果表明,随着退火温度的升高Co膜逐渐转化为Co_2Si、CoSi和CoSi_2,硅化物晶粒的大小随退火温度的升高而增大,340—370℃退火后在Co耗尽前Co_2Si和CoSi能同时生长(三相共存)。结合XRD分析,证实了上述结果的可靠性。
Alternating layers of Si (20 nm thick) and Co (20 nm thick) up to 10 layers were depositedby electron evaporation under ultrahigh vacuum conditions on Si (111) substrate. Furnaceisothermal annealing has been used to react these Co-Si multilayer films. The growth ofthe silicides were investigated systematically by using TEM technique in order to observe themicrostructural changes of the composition,crystalline grain size, surface morphology and interfacecharacter. With increasing annealing temperature, it was found that the Co-Si multilayerfilms were transformed gradually into Co_2Si,CoSi and CoSi_2 with the increase of thegrain size. But in our experiment after annealing at 340-370℃, CO_2Si and CoSi grew side byside before all cobalt was consumed. The results were also confirmed by the XRD analysis.
基金
国家自然科学基金
