摘要
报道了分子束外延生长80个周期的Al_xGa_(1-x)As/GaAs超晶格,X射线衍射和透射电镜的结果表明超晶格样品有良好的结构特性,光反射光谱观察到阱内的电子跃迁过程,其结果与理论计算相符。
An AlxGa1-xAs/GaAs superlattice with 80 periods was grown by molecular beam epitaxy. Results of X-ray diffraction and TEM indicate that the superlattice sample has good structural property. The electron transition process in quantum well is observed by modulated photo-reflection spectrum and agrees with the theoritical calculation.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1993年第1期30-34,共5页
Research & Progress of SSE
关键词
分子束外延
超晶格
AIGaAs/GaAs
Molecular Beam Epitaxy, Superlattices, X-ray Diffraction, Modulated Photo-reflection Spectrum
