摘要
使用SILVACO公司的器件模拟软件ATLAS对AlGaAs/GaAs共振隧穿二极管(RTD)进行了器件模拟,得到了不同结构的RTD的I-V特性曲线。对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。
The device simulation of AlGaAs/GaAs resonant tunneling diode(RTD)is performed by ATLAS,SILVACO softwares,and RTD I-V characteristics are obtained with different structures. The effects of quantum well width,doping concentration,barrier width and height on RTD I-V characteristics are analyzed in details.
出处
《微纳电子技术》
CAS
2004年第10期15-17,28,共4页
Micronanoelectronic Technology
