摘要
本文综述了国外Si/Si_(1-x)Ge_xHBT的发展状况,把出Si_(1-x)Ge_xHBT的特点和优越性,分析了Si_(1-x)Ge_xHBT的制造技术和设备要求,指出了Si/Si_(1-x)Gex器件的应用前景。
An overview of the worldwide development of Si/Si1-xGex heterojunotion bipolar transistors (HBT's)is made ia the paper. The property and superiority of the device are described. The manufacturing technologies and equipments for Si/Si1-xGex HBT's are examined, and the application prospects are viewed.
出处
《微电子学》
CAS
CSCD
1993年第2期27-32,共6页
Microelectronics
