期刊文献+

一种崭新的镀膜技术——等离子体束溅射 被引量:3

High target utilization plasma sputtering:a brand-new thin-film deposition technclogy
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摘要 详细描述一种等离子体高效溅射系统及应用工艺。此种崭新的溅射技术结合了蒸发镀的高效及溅射镀的高性能特点,特别在多元合金以及磁性薄膜的制备,具有其他手段无可比拟的优点。 Introduces the High Target Utilization Plasma Sputtering Technology. This brand-new sputtering technology combines the advantages of evaporation deposition and sputtering deposition, especially it is availabe to utilize for preparing multi-alloy and magnetic films. It has the unique advantages in comparison with other thin film technologies.
出处 《真空》 CAS 北大核心 2005年第1期43-45,共3页 Vacuum
关键词 高利用率等离子体溅射 共溅射 汇聚线圈 High Target Utilization Plasma Sputtering(HiTUS) co-sputtering convergence coil
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参考文献7

  • 1Oh S C,Lee T D.A study on VMn underlayer in CoCrPt longitudinal media[J].IEEE Trans.Magn.,2001,37(4):1504-1507 被引量:1
  • 2Jia H,Veldeman J,Burgelman M.Magnetic properties and microstructure of CoCr and CoCrTa thin films sputtered at high pressure on a PET substrate[J].JMMM,2001,223:73-80. 被引量:1
  • 3Park J K,Kim J H,Park S I,Lee H M,Oh D Y.Evolution of grain structure of as-deposited Cr thin films with deposition temperature[J].Script.Mat.2003,48:1161-1166 被引量:1
  • 4Thwaites M J.High density plasmas[P].USA Patent.No.646387315 October 2002. 被引量:1
  • 5Wong B Y.Laughlin D E.Controlling the magnetic properties of CoCrPt thin films by means of thin hexagonal-close-packed intermediate layers[J].Appl Phys.Lett,1992,61:2533. 被引量:1
  • 6Jones G R,Jackson M,Grady K O.Determination of the grain size in thin films[J].JMMM,1999,193:75-78 被引量:1
  • 7Valcu B,Takahashi Y,Bertram H N.Effect of crystallographic orientation on grain size distribution[J].J.Appl.Phys.2002,92(10):6094-6098. 被引量:1

同被引文献16

  • 1贾嘉.溅射法制备纳米薄膜材料及进展[J].半导体技术,2004,29(7):70-73. 被引量:16
  • 2陈莉娜,任学勤,池玲晨.真空镀膜在毛织物中的应用研究[J].毛纺科技,2006,34(1):22-24. 被引量:6
  • 3Debel F, Cammarate F J. [J].Phys D:Appl, 1998,31: L31-L33. 被引量:1
  • 4Shidoji E,Masaharn Nemoto. [J]. Jpn J Appl Phys, 1994,33:4281-4284 被引量:1
  • 5Vopsaroiu M, Thwaites M J, Rand S, Grundy P J, Grady K O. Novel sputtering technology for grain-size control[J]. IEEE Transactions, 2004,40 (4): 2443-2445. 被引量:1
  • 6Yuen C W M, Jiang S Q, Kan C W, et al. Textile metaltization [J]. Textile Asia, 2006, (9) : 33--35. 被引量:1
  • 7Kelly P J. Magnetron sputtering: a review of recent developments and applications[J]. Vacuum, 2000, 56.. 159-172. 被引量:1
  • 8Belkind A. Dual-anode magnetron sputtering[J]. Surf Coat Techno,2003, 163/164: 695--702. 被引量:1
  • 9Yuen C W M, Jiang S Q, Kan C W, et a.l Textile metallization[J].TextileAsia, 2006, 9-10: 33-35. 被引量:1
  • 10BelkindA.Dual- anode magnetron sputtering.SurfCoat Techno,l 2003, 163/164: 695-702. 被引量:1

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