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双势垒中杂质原子对量子隧穿的影响 被引量:1

Influence of Donor Atoms in Double-barrier Potentials on Quantum Transmission
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摘要 采用计算穿越任意势之透射系数的数值计算方法,得到了在双势垒阱区中有正电杂质时电子隧穿的共振能级、波函数、透射系数.通过与无杂质原子的双势垒量子隧穿情形对比,详细讨论了杂质原子对量子隧穿的影响.数值结果显示,体系的有效势是双势垒与杂质原子库仑势的叠加,当电子能量处于叠加势中的本征能级时,发生共振隧穿,对纯束缚态,不可能发生共振隧穿.此外,还给出势阱中有、无杂质两种情形的波形图,通过对比,可以进一步看出杂质原子对共振隧穿的影响. A numerical method for calculating transmission of an electron penetrating arbitrary potential barriers is adopted to obtain the resonance energy levels,wave functions and transmission coefficient when a donor atom is in the well of a double barrier structure.Comparing the results with the quantum transmission without donor atoms in the double barriers,the influence of the donor atom on quantum transmission is discussed in detail.The computational results show that the effective potential of the system is a superposition of the original potential and the coulombic potential from the donor.The peaks of the resonance penetration occur when the electron energies equal the eigen energy levels.The resonance penetration does not appear for purely bound states.In addition,the electronic wave functions for different cases are given for both of with and without an impurity.By comparison,the influence of the impurity on the resonance penetration can be further understood.
出处 《内蒙古大学学报(自然科学版)》 CAS CSCD 北大核心 2005年第1期26-30,共5页 Journal of Inner Mongolia University:Natural Science Edition
基金 国家自然科学基金资助项目(60166002)
关键词 量子隧穿 双势垒 杂质原子 透射系数 quantum tunneling double-barrier potential impurity atom transmission coefficient
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参考文献14

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共引文献7

同被引文献7

  • 1Chang L L,Eskai L,Tsu R.Resonant tunneling in semiconductor double barriers[J].Appl.Phys.Lett.,1974,24(12):593~ 594. 被引量:1
  • 2Messiah A.Quantum Mechanics[M].North-Holland:Amsterdam,1961. 被引量:1
  • 3Ando Y,Itoh T.Calculatiori of transmission tunneling current across arbitrary potential barriers[J].J.Appl.Phys.,1987,61(4):1497~1502. 被引量:1
  • 4Ban S L,Hasbun J E,Liang X X.A novel method for quantum transmission across arbitrary potential barriers[J].J.Lumin,2000,(87~89):369~371. 被引量:1
  • 5Wang X H,Gu B Y,Yang G Z.Coupling between the transverse longitudinal components of an electron in resonant tunneling[J].Phys.Rev.,1997,B55(15):9340~9343. 被引量:1
  • 6班士良,HasbunJE,梁希侠.量子隧穿的一种数值计算方法[J].内蒙古大学学报(自然科学版),2000,31(1):25-29. 被引量:8
  • 7宫箭,班士良.电子横向运动对共振隧穿的影响[J].发光学报,2001,22(1):33-36. 被引量:2

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