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铜团簇束在硅上碰撞沉积的薄膜形貌和方块电阻 被引量:3

The morphology and rectangular resistance of films formation by Cu cluster beam collided with and deposited onto Si substrate
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摘要 用一种新型磁控溅射气体凝聚团簇源产生Cu_n^-(n是簇原子个数)团簇束,当团簇束分别在偏压V_α为0,1,3,5,10kV的电场中加速后,在真空中,沉积在室温下的P-si(111)衬底上,获得Cu/P-Si(111)薄膜样品。用AFM分析表明:当V_α(?)3kV时,团簇束成膜,膜表面的粗糙度比常规磁控溅射小,且随V_α增加,粗糙度减小。用四探针测薄膜方块电阻,经归一化后可知:团簇束沉积,当V_α(?)3kV时,薄膜方块电阻大于常规磁控溅射的方块电阻,当V_α(?)5kV时薄膜方块电阻已小于常规磁控溅射方块电阻;对于团簇束沉积,薄膜方块电阻随沉积偏压V_α的增加而减小。 Cu_n^- (n is the atome number of the cluster) cluster beam was produced by a new magnetron sputter gas aggregation cluster source. The beam was accelerated by the voltage 0, 1, 3, 5, 10kV and deposited onto polished P-Si(111)substrate surface at room temperature in Vacuum and then the thin film samples of Cu/P-Si(111) were prepared. AFM analysis shows: for film deposited by the new cluster source when the accelerated voltage was more than 3 kV, the coarseness of the surface of it is less than that of the film deposited by the ordinary magnetron sputter and decreased with the increase of voltage. And it also shows, by measurement of the rectangular resistance of the film using four defecting needles and after normalization, that the rectangular resistance of the film produced by the new cluster source, when the accelerated voltage was less than 3 kV(V_α≤3 kV), is greater than that of film produced by the ordinary magnetron sputter, whereas when the accelerated voltage was more than 5 kV(V_α≥5 kV), the result is on the contrary and then the rectangular resistance of the cluster beam deposition film decreased with the increase of the biased voltage V_α.
出处 《兰州大学学报(自然科学版)》 CAS CSCD 北大核心 2004年第5期31-33,共3页 Journal of Lanzhou University(Natural Sciences)
关键词 铜团簇束沉积 单晶硅 薄膜形貌 薄膜方块电阻 copper cluster beam deposition mono crystalline film morphology film rectangular resistance
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参考文献8

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同被引文献20

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