摘要
由于直流偏压方法沉积金刚石薄膜易出现电荷积聚现象 ,从而影响了薄膜的均匀性。本文采用脉冲负偏压增强热丝化学气相沉积 (HFCVD)法 ,以WC -Co硬质合金为衬底制备金刚石薄膜 ,探讨了在不同频率脉冲直流偏压 (5 0 0～5 0 0 0Hz)下 ,脉冲偏压对金刚石薄膜的均匀性、致密性和晶粒度的影响 ,并且讨论了脉冲偏压作用的机理。对沉积的金刚石薄膜进行SEM、XRD和Raman分析。结果表明 ,采用 5 0 0Hz脉冲偏压可获得高质量的金刚石薄膜 ,薄膜的晶粒度小 ,均匀性和致密性较好。
Due to the accumulation of the electric charge during diamond deposition using DC biased technique,it is difficult to gain uniform film. In this paper,CVD diamond films were grown on tungsten carbide-cobalt substrates using pulsed DC-biased hot filament deposition at frequency of 500～5000Hz. The uniformity,density and grain size of films were studied at different frequency. Meantime,the mechanism about the effect of pulsed DC bias was discussed. At last,the diamond films were characterized by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The results show that high quality CVD diamond film is gained at frequency of 500Hz,the grain size of the film is small and the uniformity and density are satisfying.
出处
《金刚石与磨料磨具工程》
CAS
2004年第4期40-42,45,共4页
Diamond & Abrasives Engineering
基金
中国工程物理研究院军民两用技术资助 (项目号 :0 2M - 51 )
关键词
脉冲偏压
金刚石薄膜
频率
pulsed DC bias
diamond film
frequency
