摘要
V2 O5薄膜具有很好的离子注入 /退出可逆性 ,是最有潜力的锂离子储存层的候选材料之一。它的电学特性与制备方法、化学计量比、结构和取向等有直接关系 ,仔细控制工艺参量是制备出在锂电池上应用的V2 O5薄膜关键。研究中采用脉冲磁控反应溅射方法 ,通过精确地控制氧分压、基底温度等关键工艺参量 ,在石英玻璃和硅片上制备V2 O5薄膜。利用X射线衍射和X射线光电子谱 ,分析了薄膜的成分、相结构、结晶和价态情况 ,用原子力显微镜表征了薄膜的微观结构 ,用分光光度计测量从 2 0 0～ 2 5 0 0nm波段V2 O5薄膜的透射和反射光谱 ,对薄膜的电学性能也进行了测量和分析。结果表明 ,V2 O5薄膜纯度高、相结构单一、结晶度好。高低温电阻变化 2个量级 ,薄膜的光学能隙为 2 .4 6eV。
Vanadium oxide is a promising material for cathode of thin film battery due to its high discharge capacity and good cycle performance. In the preparation of vanadium oxide film,the stoichiometry, structure and orientation of vanadium oxide can be influenced by the process parameters. The nature of vanadium oxide films can also affect their electrochemical properties. Therefore, a careful control is required to obtain high quality vanadium oxide thin films for battery application. Vanadium pentoxide (V 2O 5) thin films were grown onto quartz glass and silicon substrates by pulsed magnetron reactive sputter technique while sputtering power and oxygen partial pressure and substrate temperature are controlled accurately during experiment. X-ray diffraction, X-ray photoelectron spectroscopy are used to analyze the composition, phase structure, crystalline and valence state of the film. Atomic force spectroscopy is used to identify the film surface morphology. Optical transmission and reflection characteristics were measured by spectroscopy from 200 nm to 2500 nm wavelength region. The electronic performance of the film is also tested. These investigation reveals that V 2O 5 films have high purity, monophase and resistance change 2-order of magnitude from room to transition temperature, optical band gap E g is about 2.46 eV.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2004年第6期743-746,共4页
Acta Optica Sinica
