摘要
V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c-axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500 ℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithium or magnesium thin-film batteries.
V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c-axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500 ℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithium or magnesium thin-film batteries.
基金
[This work was financially supported by the National Natural Science Foundation of China (No.50402024)
Natural Science Foundation of Gansu Province (No.ZS 041-A25-033).
