摘要
用射频磁控溅射法在单晶Si(100)基片上制备了SiC薄膜。将制备的薄膜分别在800、900和1000℃空气气氛中退火120 min。用X射线衍射仪和傅里叶变换红外光谱仪测试了薄膜的结构,用X射线光电子能谱仪测试了薄膜元素的组成和状态,用场发射扫描电子显微镜测试了薄膜表面的形貌。结果表明:经800℃空气退火后,薄膜表面生成了一层SiO2保护层,阻止了内部SiC薄膜的继续氧化,因此SiC薄膜在800℃具有较好的高温抗氧化性;随着退火温度的升高,SiC薄膜被进一步氧化,经1000℃空气退火后,薄膜已大部分转变为SiO2。
The SiC thin film was prepared on Si(100) substrates by RF magnetron sputtering at room temperature.Then the SiC film was annealed at 800-1000 ℃ for 120 min in air atmosphere.The structure of the SiC thin film was studied by XRD and FTIR.The composition state and morphologies of the thin film were studied by XPS and SEM.The results show that after annealing at 800 ℃ in air,a SiO2 protected layer forms on the surface of SiC thin film,which protects the inner SiC thin film from oxidizing.So SiC thin film have a good resistance of oxidation after annealing at 800 ℃.With the annealing temperature increasing,the oxidizing reaction continues,after annealing at 1000 ℃ in air,SiC thin film almost become SiO2.
出处
《材料热处理学报》
EI
CAS
CSCD
北大核心
2013年第S1期135-138,共4页
Transactions of Materials and Heat Treatment
基金
国家"973"计划项目(2008CB717802)
安徽省自然科学基金(090414182)
安徽省高校自然科学基金(KJ2009A091
KJ2012A228)
