摘要
采用溶胶-凝胶法,以氟化钾和V2O5为前驱体高温共熔后水淬得到掺钾V2O5溶胶,然后在云母基底上制备掺钾VO2薄膜。采用SEM、XRD、XPS分析薄膜表面形貌和微观结构,利用FTIR检测薄膜在不同温度下的红外透过率,确定钾掺杂薄膜的相变温度及滞后温宽。结果表明,K进入VO2晶格替代部分V4+,在晶格中以K+的形式存在,掺杂后VO2薄膜相变温度明显降低,与未掺杂薄膜相比滞后温宽只有2℃,降低幅度较大。
Mixture of potassium fluoride and vanadium pentaoxide powder was used as a precursor to prepare K doped VO2 films on the muscovite substrate by inorganic sol-gel method.SEM,XRD and XPS were employed to analyze the morphology and microstructure of the films FTIR was used to test the infrared transmittance of the samples at different temperatures and determine the transformation temperatures and hysteresis loop width of K doped VO2 films.The results suggest that the potassium existing in the VO2 films in the form of K+ is substituted for part of V atoms in the lattice.After doping K,the transition temperature of VO2 film changes appreciably.But the hysteresis loop width decreases significantly,which was only 2 ℃,compared with undoped films.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2013年第S2期335-338,共4页
Rare Metal Materials and Engineering
基金
国家教育部回国人员科研启动基金
关键词
钾掺杂
VO2薄膜
滞后温宽
相变温度
potassium doping
VO2 film
hysteresis loop width
phase transition temperature
