摘要
CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thinfilm. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to theelectrons transition from Ce4f band to O2p band and thedefect level to O2p band. And these defects levels were lo-cated in the range of 1 eV around Ce4f band.
CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thinfilm. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to theelectrons transition from Ce4f band to O2p band and thedefect level to O2p band. And these defects levels were lo-cated in the range of 1 eV around Ce4f band.
