摘要
Doping of ZnO nanostructures was investigated by using a low temperature electrochemical process. Various dopant materials have been studied, including transition metals, group I, and group VII elements. The structure, composition, and optical properties of the doped ZnO nanostructures were analyzed by scanning electron microscopy, energy dispersive X-ray spectroscopy, photoluminescence, and x-ray diffraction. It was demonstrated that dopant elements were incorporated into the ZnO structures. The effects of dopant incorporation on the structure and properties of ZnO were also investigated. This low temperature approach is compatible with current micro-fabrication techniques and promising for large-scale production of doped ZnO nanostructures for optical and electronic applications.
Doping of ZnO nanostructures was investigated by using a low temperature electrochemical process. Various dopant materials have been studied, including transition metals, group I, and group VII elements. The structure, composition, and optical properties of the doped ZnO nanostructures were analyzed by scanning electron microscopy, energy dispersive X-ray spectroscopy, photoluminescence, and x-ray diffraction. It was demonstrated that dopant elements were incorporated into the ZnO structures. The effects of dopant incorporation on the structure and properties of ZnO were also investigated. This low temperature approach is compatible with current micro-fabrication techniques and promising for large-scale production of doped ZnO nanostructures for optical and electronic applications.
