摘要
通过电沉积的方法制备具有金属和半导体特性的微米到纳米量级的有序结构,是当今纳米研究领域的热点之一。由于生长前沿沉积电势的分布直接影响着纳米异质结构的形貌,所以推导生长前沿沉积电势分布的情况就尤为重要。本文利用数学手段推导了准二维电沉积纳米异质结构沉积电势的分布的解析表达式,合理地解释了准二维纳米结构生长的形貌,为以后的理论分析奠定了基础。
It nanometer is today one of the hot areas of research,through electrode position method manufac- tm'ing Orderly structure With metal and semiconductor properties,Micron from the magnitude of nanotechnology potential direct impact on the distribution of morphology,So conductive pushing the situation on the potential dis- tribution is particularly important.This means using mathematical derivation of the potential distribution of ana- lytical expressions,a reasonable explanation of the prospective growth of ...
出处
《白城师范学院学报》
2008年第6期35-37,共3页
Journal of Baicheng Normal University
关键词
电沉积
纳米异质结构
生长电势
数值分析
electrode position
heterostructurel
growth potent
numerical analysis
