摘要
(Ba, Sr)RuO3 has been paid an attention as a promising electrode for (Ba, Sr)TiO3 dielectric material due to its similarity in structure and chemical composition with BST. In this study, (Ba, Sr)RuO3 conductive oxide film was deposited on a 4 inch p-type Si wafer by metal organic chemical vapor deposition (MOCVD) using single cocktail source for the practical device application. Ba(TMHD)2, Sr(TMHD)2, Ru(TMHD)3 precursors and solvent [1-EtylePiPerdine (C7H15 N) ] as starting materials were mixed together for single cocktail source. A liquid delivery system (LDS) and a vaporization cell were utilized for the delivery and vaporization of single cocktail source, respectively. The source feeding rate was controlled by a liquid mass flow controller (LMFC). Deposition parameters, such as the oxygen flow and the source flow rate,were sensitive to phase formation, resistivity and the composition ratio of (Ba, Sr)RuO3 films. Highly (110)-textured (Ba,Sr)RuO3 film was obtained vhen the Ar/O2 ratio was 200/140 sccm at a source flow rate of 0.05 sccm. The process window of stoichiometric composition of BSR film was observed with varying the source flow rate from 0.05 sccm to 0.1 sccm.
