摘要
根据Ag2Se-Ga2Se3赝二元相图,对AgGa1-xInxSe2按同成分点配料,通过机械和温度振荡的方法合成出AgGa1-xInxSe2多晶材料.并对合成的多晶材料进行了XRD测试,与直接法合成的AgGa1-xInxSe多晶材料进行对比.结果表明,改进工艺后合成的AgGa1-xInxSe2多晶材料的图谱与标准PDF卡片相符,表明其是高纯单相的AgGa1-xInxSe2多晶材料.用新方法合成的AgGa1-xInxSe2多晶材料进行单晶生长,获得了完整的AgGa1-xInxSe2单晶体.实验结果表明,机械和温度振荡法是合成高质量AgGa1-xInxSe2多晶材料的一种有效方法.
Based on the principle of contrasting referring to Ag_ 2 Se-Ga_ 2 Se_ 3 pseudobinary phase diagram, AgGa_ 1-x In_ x Se_ 2 polycrystalline materials with a portion of In content were synthesized by mechanical and temperature oscillation method. The spectra of X-ray power diffraction are consistent with the standard PDF cards. Compared with the result of the direct method synthesized polycrystalline materials, it is found that synthesis polycrystalline materials using new method were high pure and single-phas...
出处
《四川大学学报（自然科学版）》
CAS
CSCD
北大核心
2005年第S1期196-198,共3页
Journal of Sichuan University(Natural Science Edition)
基金
教育部博士点基金(20040610024)
