摘要
报道了基于0.25μm GaAs PHEMT工艺的2.8～4.2GHz MMIC低噪声放大器,详细介绍和分析了低噪声放大器的器件基础和设计原理,设计采用源极串联电感负反馈方法使输入阻抗共轭匹配和最小噪声匹配趋于一致,偏置网络采用自偏置栅压、单电源供电,并用ADS软件仿真。电路评估板选用Rogers RO4350B,在2.8～4.2GHz频段内测得增益大于20dB、增益平坦度小于2.5dB、噪声系数小于2.3dB、输入输出驻波比小于2.0。
The paper presents a self-bias 2.8～4.2 GHz low noise amplifier MMIC based on a standard 0.25 μm GaAs PHEMT technology.The design principle of low noise amplifier by converging the input impedance conjugate match and optimum noise match is introduced.The series voltage negative feedback amplifier has demonstrated a maximum noise figure of 2.3 dB,an associated gain of more than 20 dB from 2.8 to 4.2 GHz.The circuit simulation is achieved by using ADS software.The test is completed using Rogers RO4350B as test...
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2007年第2期203-206,共4页
Research & Progress of SSE
基金
国家自然科学基金资助项目(No60276021)
国家重点基础研究规划资料项目(No.G2002CB311901)
