摘要
针对VDMOS的栅源漏电(Igss)机理进行分析,对于平面型VDMOS、沟槽型VDMOS栅源漏电的各种原因进行分析,并列出各种芯片生产实例,提出相应工艺改善措施进行总结。
This paper describes theory of Igss on VDMOS technology and analyzes the causes of Igss for both trench and planar VDMOS.Some examples in real production are listed and the improving solutions are summarized.
作者
方绍明
赵美英
闻正锋
FANG Shaoming;ZHAO Meiying;WEN Zhengfeng(Sunmoon Microelectronics Co.,Ltd,China;Founder Microelectronics International Co.,Ltd,China;Huawei Technology,Co.,Ltd,China)
出处
《电子技术（上海）》
2020年第3期30-32,共3页
Electronic Technology
