摘要
为了解决晶体管寄生参数对逆F(F^(-1))类功率放大器效率的影响,采用了一种新型的输出谐波控制结构。首先,设计二次和三次谐波控制电路,同时将直流偏置电路加入二次谐波控制电路,降低了电路设计的复杂度。其次,为了解决寄生参数对F^(-1)类功放本征漏极端阻抗的影响,采用一段串行微带线进行寄生补偿。最后,通过微带线和电容进行基波和负载之间的匹配。为验证方法的有效性,采用0.25μm氮化镓高电子迁移率晶体管(GaN HEMT)工艺,设计了一款工作在5.7 GHz~6.3 GHz的F^(-1)类微波集成电路功放。版图后仿真结果显示,F^(-1)类功放的漏极效率DE为57.2%~62.3%,功率附加效率PAE为51.8%~57.4%,饱和输出功率为39.0 dBm~40.4 dBm,增益为9.0 dBm~10.4 dBm。版图面积为3.2×1.7 mm^(2)。
A new output harmonic control structure was adopted for solving the influence of transistor parasitic parameters on the efficiency of the inverse class F(F^(-1))power amplifier.Firstly,the second and third harmonic control circuits were designed,and the direct current bias circuit was added into the second harmonic control circuit,which reduced the complexity of circuit design.Secondly,in order to solve the influence of parasitic parameters on the intrinsic drain impedance of class F^(-1)power amplifier,a serial microstrip line was used for parasitic compensation.Finally,the fundamental wave and load were matched through microstrip lines and capacitors.In order to verify the effectiveness of the method,a 0.25μm gallium nitride high electron mobility(GaN HEMT)transistor technology was adopted to design an class F^(-1)Monolithic Microwave Integrated Circuit(MMIC)power amplifier working at 5.7 GHz~6.3 GHz.The post-layout simulation results show that the drain efficiency(DE)and power added efficiency(PAE)of class F^(-1)power amplifier are 57.2%~62.3%and 51.8%~57.4%,respectively.The saturated output power is 39.0 dBm~40.4 dBm,the gain is 9.0 dBm~10.4 dBm,and the layout area is 3.2×1.7 mm^(2).
作者
张盼盼
王德勇
张金灿
王金婵
刘敏
刘博
ZHANG Panpan;WANG Deyong;ZHANG Jincan;WANG Jinchan;LIU Min;LIU Bo(School of Electrical Engineering,Henan University of Science and Technology,Luoyang,Henan 471023,P.R.China)
出处
《微电子学》
CAS
北大核心
2022年第6期961-966,共6页
Microelectronics
基金
国家自然科学基金资助项目(61804046,61704049)
河南省科技攻关项目(212102210286)
