摘要
当前片上天线的结构形式均局限在二维或二维半的空间内,衬底引入的寄生效应严重,天线的增益和效率相对较低。为了解决上述问题,本文提出一种基于氮化硅(SiNx)自卷曲薄膜(S-RuM)纳米技术的片上太赫兹螺旋阵列天线的加工和设计方法。通过对SiNx自卷曲薄膜结构的设计,实现了对三维螺旋结构的内直径、螺距和匝数等特征参数的精确控制,并且其制造工艺与常规半导体工艺完全兼容。HFSS有限元仿真结果表明具有反射环结构的5匝单螺旋天线的相对带宽为9%,增益可达到9.8dB@0.3THz,半功率波束宽度为45°;2×1阵列的增益可达到12.3dB。
Currently,the structure of the on-chip antenna is limited in two-dimensional(2 D)or 2.5 D space.The antenna gain and efficiency are relatively low due to the serious parasitic effects introduced by the substrate.In order to solve the problem,this paper presents a design strategy of on-chip terahertz(THz)helical array antenna with corresponding fabrication flow based on silicon nitride(SiNx)self-rolled-up membrane(S-Ru M)nanotechnology.By designing the Si Nx S-RuM membrane structure,characteristic parameters such as the internal diameter,the pitch between turns,and the number of turns is able to be precisely controlled.Furthermore,the fabrication flow is fully compatible with the conventional semiconductor processing.The results of HFSS finite element simulation show that the relative bandwidth of 5-turn single helical antenna with reflective ring structure is 9%with antenna gain of 9.8 dB@0.3 THz and half power beam width of 45°.Furthermore,and the antenna gain of 2×1 S-RuM helical array antenna is able to reach 12.3 dB.
作者
何晴
黄文
HE Qing;HUANG Wen(School of Microelectronics,Hefei University of Technology,Hefei 230601,China)
出处
《微波学报》
CSCD
北大核心
2020年第S01期302-305,共4页
Journal of Microwaves
基金
安徽高校协同创新项目(GXXT-2019-030)
关键词
自卷曲薄膜技术
太赫兹天线
片上螺旋天线
self-rolled-up membrane nanotechnology
THz antenna
on-chip helical antenna
