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高能Pb离子辐照注碳SiO_2的红外谱研究 被引量:4
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作者 赵志明 王志光 +5 位作者 A.Benyagoub M.Toulemonde F.Levesque 宋银 金运范 孙友梅 《高能物理与核物理》 EI CSCD 北大核心 2005年第8期824-829,共6页
室温下,先用120keV的C离子注入二氧化硅薄膜样品至剂量2.0×1017,5.0×1017或8.6×1017ions/cm2,再用950MeV的Pb离子分别辐照至剂量5.0×1011,1.0×1012或3.8×1012ions/cm2,然后测量样品的傅里叶变换红外(FTIR... 室温下,先用120keV的C离子注入二氧化硅薄膜样品至剂量2.0×1017,5.0×1017或8.6×1017ions/cm2,再用950MeV的Pb离子分别辐照至剂量5.0×1011,1.0×1012或3.8×1012ions/cm2,然后测量样品的傅里叶变换红外(FTIR)光谱.通过分析测量得到的傅里叶变换红外谱,发现Pb离子辐照在注碳SiO2样品中可引起大量的Si—C和Si(C)—O—C等化学键的形成,大剂量Pb离子辐照可在大剂量注碳的SiO2中产生分子CO2.大量的Si—C键的存在和分子CO2的形成,预示着高能Pb离子辐照在注碳SiO2样品中有可能形成了纳米Si团簇和/或SiC晶粒. 展开更多
关键词 低能离子注入 高能重离子辐照 原子混合 FTIR谱 红外光谱
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纯金属Bi中高能重离子辐照效应
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作者 王志光 M.Toulemonde +3 位作者 金运范 C.Dufour J.Dural E.Paumier 《科学通报》 EI CAS CSCD 北大核心 2001年第12期992-995,共4页
利用高能重离子(Kr, Xe, Sn和Pb )辐照处于 16或 100 K的低熔点纯金属 Bi,通过测量分析辐照引起的样品电阻率增量及其变化速率随辐照剂量的变化,研究了入射离子在Bi中引起的辐照损伤效应如辐照损伤效率及复杂缺... 利用高能重离子(Kr, Xe, Sn和Pb )辐照处于 16或 100 K的低熔点纯金属 Bi,通过测量分析辐照引起的样品电阻率增量及其变化速率随辐照剂量的变化,研究了入射离子在Bi中引起的辐照损伤效应如辐照损伤效率及复杂缺陷的产生等.结果表明,强的电子能损可在纯金属Bi中引起附加缺陷的产生,从而使得辐照损伤效率>1.电子能损值大时,入射离子在Bi中引起的辐照效应主要是电子能损效应.辐照温度和入射离子速度对辐照效应的强弱有一定的影响. 展开更多
关键词 纯金属铋 辐照损伤效率 电子能损效应 高能重离子辐照效应 电阻率 辐照剂量
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The Importance of the Creation of CEFTA-2006 for the Western Balkans' Trade Exchange of Goods
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作者 Kikerkova Irena 《Chinese Business Review》 2011年第10期844-854,共11页
By integrating 32 bilateral free trade agreements, CEFTA-2006 became the first multilateral free trade agreement of the Western Balkan countries. Signed at the end of 2006, it was supposed to establish a free trade ar... By integrating 32 bilateral free trade agreements, CEFTA-2006 became the first multilateral free trade agreement of the Western Balkan countries. Signed at the end of 2006, it was supposed to establish a free trade area among the following member-states: Albania, Bosnia and Herzegovina, Croatia, Macedonia, Moldova, Monte Negro and Serbia.l The free trade area was supposed to be fully functional by the end of 2010 and should provide trade liberalization by elimination of all tariff and non-tariff barriers for agricultural and non-agricultural goods, as well as trade facilitation by simplification of rules of origin and transit procedures. It should also provide mutual recognition of national sanitary, phytosanitary and technical standards. The free trade area should also enable free trade of services, full protection of intellectual rights, fair rules of public procurement procedures and liberalization of capital investment. The beginning of the creation of the free trade area of the Western Balkan countries created a positive effect upon the increment of the trade exchange of goods among its member-states. However, the weak individual economic capacity of each of them immediately caused a decrement in the exports of goods towards trading partners out of CEFTA-2006. Positive effects realized in the beginning of the creation of the free-trade area were very soon annulated by the influence of the economic crises in 2008. At present, the region experiences a slight, but very slow recovery. 展开更多
关键词 CEFTA-2006 Republic of Macedonia free trade area trade liberalization trade facilitation tradeexchange of goods
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快重离子辐照引起Ni/SiO_2界面原子混合及相变研究
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作者 刘纯宝 王志光 +8 位作者 魏孔芳 臧航 姚存峰 马艺准 盛彦斌 缑洁 金运范 A.Benyagoub M.Toulemonde 《原子核物理评论》 CAS CSCD 北大核心 2009年第1期44-47,共4页
在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/Si O2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面... 在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/Si O2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和Ni O相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。 展开更多
关键词 快重离子辐照 界面原子混合与结构相变 卢瑟福背散射 X射线衍射
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Application of Heavy Ion Physics and Nuclear Technique——FTIR Investigation of C-implanted Crystalline SiO2 after 950 MeV Pb-ion irradiation
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作者 Wang Zhiguang Zhao Zhiming +6 位作者 A. Benyagoub M. Toulemonde Song Yin Liu Chunbao Zang Hang Wei Kongfang Jin Yunfan 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2005年第1期57-57,59,60,共3页
<正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200... <正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200 kV heavy ion implanter of IMP and the selected implantation doses are 2. 0×1017 , 5. 0×1017, 8. 6×1017 and 1. 2×1017C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluencies are 5.0×1011,1. 0×1012 and 1..0×1012 Pb/cm2 , respectively. The chemical bonds formation in the samples was investigated by using a Spectrum GX IR spectroscopy. 展开更多
关键词 重离子物理 二氧化硅 MEV 铅离子 红外光谱 离子辐照 植入 核技术
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针灸治疗中风病临床研究进展及展望 被引量:1
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作者 Jihe Zhu Blagica Arsovska 《亚太传统医药》 2015年第19期39-40,共2页
中风患者起病急骤,一经发现需要立即治疗,但是临床上仍有很高的死亡率和具有较严重的并发症,影响患者健康,极大降低了患者生活质量。目前已经研究出来的有关针灸法治疗中风病已经取得了显著疗效。主要对针灸法治疗中风的临床研究进行分... 中风患者起病急骤,一经发现需要立即治疗,但是临床上仍有很高的死亡率和具有较严重的并发症,影响患者健康,极大降低了患者生活质量。目前已经研究出来的有关针灸法治疗中风病已经取得了显著疗效。主要对针灸法治疗中风的临床研究进行分析,并对未来的研究方向进行展望。 展开更多
关键词 中风 针灸 临床研究 研究进展
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Raman Scattering Investigation of C-doped a-SiO2 after High Energy Heavy Ion Irradiation
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作者 Liu Chunbao Wang Zhiguang +8 位作者 Song Yin Zang Hang Wei Kongfang A. Benyagoub M. Toulemonde Zhang Chonghong Yao Cunfeng Zhou Lihong Sheng Yanbin 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2006年第1期61-61,共1页
关键词 喇曼散射 碳掺杂 二氧化硅 高能重离子 离子照射
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Inter-mixing of Ni/c-SiO2 after High Energy Ion Irradiations
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作者 Liu Chunbao Wang Zhiguang +5 位作者 Peng Xinping Song Yin Zang Hang Wei Kongfang Yao Cunfeng M. Toulemonde 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2006年第1期62-62,共1页
关键词 二氧化硅 混合物 高能离子照射 磁电管反应溅射法
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XRD Investigation of Ti/c-SiO2 Interface after Pb-ion Irradiation
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作者 Liu Chunbao Wang Zhiguang +5 位作者 Peng Xinping Song Yin Zang Hang Wei Kongfang Yao Cunfeng M. Toulemonde 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2006年第1期64-64,共1页
关键词 二氧化硅 铅离子照射 磁电管反应溅射法
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FTIR Study of C-doped SiO_2 Films Irradiated by 4.57 MeV/u Pb Ions
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作者 ZhaoZhiming SongYin +4 位作者 WangZhiguang JinYunfan A.Benyagoub M.Toulemonde F.Levesque 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2003年第1期74-74,共1页
The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dos... The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dose ranging from 2.0×10^17C/cm^2 to 8.6×10^17C/cm^2,The irradiation was performed at CARIL-GANIL,Caen,France to the fluence ranging from 5.0×10^11Pb/cm^2 to 3.8×10^12Pb/cm^2.Some parameters were given in Table 1(TRIM 96 calculation)。 展开更多
关键词 B/C C/C RT FTIR SiO2
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Chemical Bond Formation in C-implanted SiO_2 Films Induced by High-energy Pb-ion Irradiation
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作者 A. Benyagoub M. Toulemonde F. Levesque 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2004年第1期67-67,共1页
SiO2 films were firstly implanted at room temperature (RT) with 120 keV C-ions and then irradiated at RT with 950 MeV Pb ions. The C-ion implantation was performed at the 200 kV heavy ion implanter (IMP, Lanzhou) and ... SiO2 films were firstly implanted at room temperature (RT) with 120 keV C-ions and then irradiated at RT with 950 MeV Pb ions. The C-ion implantation was performed at the 200 kV heavy ion implanter (IMP, Lanzhou) and the selected implantation doses are 2.0×1017, 5.0×1017 and 8.6×1017 C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluence was in the region from 5.0×1011 to 3.8×1012 Pb/cm2. The chemical bond formation in the samples was investigated by using a Spectrum GX IR spectroscopy. 展开更多
关键词 离子辐照 铅离子 化学键 二氧化硅膜 诱导 高能 SIO2薄膜 离子植入
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Simulation of Sputtering Yield of Pure Metal under Swift Heavy Ion Bombardment
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作者 M.Toulemonde C.Dufour S.Euphrasie 《IMP & HIRFL Annual Report》 2001年第1期59-59,共1页
Simulations of sputtering yield of Ti and Zr under energetic particle bombardments at room temperature (300 K)have been done by using a Fortran code TMNUCSP developed from the modified thermal spike model~[1].
关键词 SWIFT ENERGETIC sputtering FORTRAN SPIKE corrected collision projectile thermodynamics ANALOGY
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Evidence of New Structure Formation in C-doped SiO_2 after 4.57 MeV/u Pb Ion Irradiation
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作者 WangZhiguang ZhaoZhiming +10 位作者 SongYin JinYunfan ZhangChonghong LiuJie SunYoumei A.Benyagoub M.Toulemonde F.Levesque H.Takahashi T.Shibayama N.Sakagushi 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2003年第1期56-56,共1页
Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change pro... Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation + swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitations 展开更多
关键词 结构编队 二氧化硅 碳杂质 铅离子 放射性 相位变换
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Fragmentation Path Way of Tetraphenyl Iron (Ⅲ Porphyrin Chloride
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作者 Li Bin Chen Lanfang +5 位作者 Ma Xinwen R. Brfdy J. Bernard B. Manil B. A. Huber S. Martin 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2007年第1期135-135,共1页
关键词 四苯基卟啉 氯化 卟啉衍生物 天然色素 化学性质 裂解机理
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Fragmentation of Tetraphenyl Iron(Ⅲ) Porphyrin Chloride (FeTPPCl) Induced by Slow Multi-chareed Ions
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作者 Li Bin L. Chen +5 位作者 Ma Xinwen R. Bredy J. Bernard B. Manil B. A. Huber S. Martin 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2009年第1期198-198,共1页
关键词 金属卟啉 四苯基 离子对 氯化物 生物大分子 卟啉分子 光合作用
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Complex Defects in Bismuth Produced by Swift Heavy Ion Irradiations
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作者 WangZhiguang M.Toulemonde 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2000年第1期142-142,共1页
关键词 重离子 辐射 缺陷
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