摘要
SiO2 films were firstly implanted at room temperature (RT) with 120 keV C-ions and then irradiated at RT with 950 MeV Pb ions. The C-ion implantation was performed at the 200 kV heavy ion implanter (IMP, Lanzhou) and the selected implantation doses are 2.0×1017, 5.0×1017 and 8.6×1017 C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluence was in the region from 5.0×1011 to 3.8×1012 Pb/cm2. The chemical bond formation in the samples was investigated by using a Spectrum GX IR spectroscopy.
SiO2 films were firstly implanted at room temperature （RT） with 120 keV C-ions and then irradiated at RT with 950 MeV Pb ions. The C-ion implantation was performed at the 200 kV heavy ion implanter （IMP, Lanzhou） and the selected implantation doses are 2.0× 1017, 5.0× 1017 and 8.6× 1017 C/cm2. The Pb ion irradiation was carried out at the IRASME （CIRIL-GANIL, Caen） and the irradiation fluence was in the region from 5.0 × 1011 to 3.8 × 1012 Pb/cm2. The chemical bond formation in the samples was investigated by using a Spectrum GX IR spectroscopy.
基金
Supported by National Natural Science Foundation of China (1012552210475102).
