针对铷原子能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL)。根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构。采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯...针对铷原子能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL)。根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构。采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯片并进行了测试。当有源区直径从6μm减小到3μm时,VCSEL芯片的边模抑制比(SMSR)由8.76 d B增加到34.05 d B,阈值电流由0.77 m A减小到0.35 m A。有源区直径为6,5,4和3μm的VCSEL芯片的输出功率分别为0.37,0.46,0.58和0.44 m W,有源区直径为4μm的VCSEL芯片的远场为圆形光束,发散角为15°。85℃时3.5μm有源区直径的VCSEL芯片输出功率为0.125 m W,激射波长为795.3 nm。室温3 d B带宽大于8 GHz,满足了铷原子传感器对VCSEL单模光谱、输出功率及调制速率的要求。展开更多
The influence ot oxidation aperture on the output characteristics ot the circularly symmetric vertical-cavity-surtaceemitting laser(VCSEL) structure is investigated.To do so,VCSELs with different oxide aperture sizes ...The influence ot oxidation aperture on the output characteristics ot the circularly symmetric vertical-cavity-surtaceemitting laser(VCSEL) structure is investigated.To do so,VCSELs with different oxide aperture sizes are simulated by the finite-difference time-domain(FDTD) method.The relationships among the field distribution of mode superposition,mode wavelength,output spectra,and far-field divergence with different oxide apertures are obtained.Further,VCSELs respectively with oxide aperture sizes of 2.7 μm,4.4 μm,5.9 μm,7 μm,8 μm,9 μm,and 18.7 μm are fabricated and characterized.The maximum output power increases from 2.4 mW to 5.7 mW with oxide aperture increasing from 5.9 μm to 9 μm.Meanwhile,the wavelength tuning rate decreases from 0.93 nm/mA to 0.375 nm/mA when the oxide aperture increases from 2.7 μm to 9 μm.The thermal resistance decreases from 2.815℃/mW to 1.015℃/mW when the oxide aperture increases from 4.4 μm to 18.7μm.It is demonstrated theoretically and experimentally that the wavelength spacing between adjacent modes increases with the augment of the injection current and the spacing becomes smaller with the oxide aperture increasing.Thus it can be reported that the aperture size can effectively reduce the mode overlaying but at the cost of the power decreasing and the wavelength tuning rate and thermal resistance increasing.展开更多
文摘针对铷原子能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL)。根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构。采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯片并进行了测试。当有源区直径从6μm减小到3μm时,VCSEL芯片的边模抑制比(SMSR)由8.76 d B增加到34.05 d B,阈值电流由0.77 m A减小到0.35 m A。有源区直径为6,5,4和3μm的VCSEL芯片的输出功率分别为0.37,0.46,0.58和0.44 m W,有源区直径为4μm的VCSEL芯片的远场为圆形光束,发散角为15°。85℃时3.5μm有源区直径的VCSEL芯片输出功率为0.125 m W,激射波长为795.3 nm。室温3 d B带宽大于8 GHz,满足了铷原子传感器对VCSEL单模光谱、输出功率及调制速率的要求。
文摘The influence ot oxidation aperture on the output characteristics ot the circularly symmetric vertical-cavity-surtaceemitting laser(VCSEL) structure is investigated.To do so,VCSELs with different oxide aperture sizes are simulated by the finite-difference time-domain(FDTD) method.The relationships among the field distribution of mode superposition,mode wavelength,output spectra,and far-field divergence with different oxide apertures are obtained.Further,VCSELs respectively with oxide aperture sizes of 2.7 μm,4.4 μm,5.9 μm,7 μm,8 μm,9 μm,and 18.7 μm are fabricated and characterized.The maximum output power increases from 2.4 mW to 5.7 mW with oxide aperture increasing from 5.9 μm to 9 μm.Meanwhile,the wavelength tuning rate decreases from 0.93 nm/mA to 0.375 nm/mA when the oxide aperture increases from 2.7 μm to 9 μm.The thermal resistance decreases from 2.815℃/mW to 1.015℃/mW when the oxide aperture increases from 4.4 μm to 18.7μm.It is demonstrated theoretically and experimentally that the wavelength spacing between adjacent modes increases with the augment of the injection current and the spacing becomes smaller with the oxide aperture increasing.Thus it can be reported that the aperture size can effectively reduce the mode overlaying but at the cost of the power decreasing and the wavelength tuning rate and thermal resistance increasing.
