Antimony sulfide(Sb_(2)S_(3))solar cells fabricated via hydrothermal deposition have attracted widespread attention.The annealing crystallization process plays a crucial role in achieving optimal crystallinity in hydr...Antimony sulfide(Sb_(2)S_(3))solar cells fabricated via hydrothermal deposition have attracted widespread attention.The annealing crystallization process plays a crucial role in achieving optimal crystallinity in hydrothermal Sb_(2)S_(3)thin films.Nevertheless,incomplete crystallization and the loss of sulfur at high-temperature contribute to defect recombination,constraining device performance.Herein,a twostep rapid thermal processing(RTP)annealing strategy is proposed to improve the crystal quality and efficiency of Sb_(2)S_(3)solar cells.The annealing process in Ar protection with atmospheric pressure can suppress S loss caused by saturated vapor pressure.The two-step RTP annealing with the 330℃ low-temperature and 370℃ high-temperature process ensures high crystallinity and vertical orientations of Sb_(2)S_(3)thin films,accompanied by a reduction in defect concentration from 1.01×10^(12)to 5.97×10^(11)cm^(-3).The Sb_(2)S_(3)solar cell achieves an efficiency of 8.20%with an enhanced open circuit voltage(VOC)of 784 mV.The build-in voltage(Vbi)of 1.17 V and irradiation-dependent ideal factor(n)of 1.48 demonstrate enhanced heterojunction quality and suppressed defect recombination in the devices.The presented two-step annealing strategy and physical mechanism study will open new prospects for high-performance Sb_(2)S_(3)solar cells.展开更多
The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process fo...The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.展开更多
基金supported by the National Natural Science Foundation of China(52372183,52002073,62305064)the Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ124)the Foundation of Fujian Provincial Department of Industry and Information Technology of China(82318075)。
文摘Antimony sulfide(Sb_(2)S_(3))solar cells fabricated via hydrothermal deposition have attracted widespread attention.The annealing crystallization process plays a crucial role in achieving optimal crystallinity in hydrothermal Sb_(2)S_(3)thin films.Nevertheless,incomplete crystallization and the loss of sulfur at high-temperature contribute to defect recombination,constraining device performance.Herein,a twostep rapid thermal processing(RTP)annealing strategy is proposed to improve the crystal quality and efficiency of Sb_(2)S_(3)solar cells.The annealing process in Ar protection with atmospheric pressure can suppress S loss caused by saturated vapor pressure.The two-step RTP annealing with the 330℃ low-temperature and 370℃ high-temperature process ensures high crystallinity and vertical orientations of Sb_(2)S_(3)thin films,accompanied by a reduction in defect concentration from 1.01×10^(12)to 5.97×10^(11)cm^(-3).The Sb_(2)S_(3)solar cell achieves an efficiency of 8.20%with an enhanced open circuit voltage(VOC)of 784 mV.The build-in voltage(Vbi)of 1.17 V and irradiation-dependent ideal factor(n)of 1.48 demonstrate enhanced heterojunction quality and suppressed defect recombination in the devices.The presented two-step annealing strategy and physical mechanism study will open new prospects for high-performance Sb_(2)S_(3)solar cells.
文摘The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.
