摘要
针对锗硅在形成金属锗硅化物时存在部分应力释放、界面形貌特性变差的问题,提出了在Si0.72Ge0.28上分别外延薄硅(Si)覆盖层和锗硅(Si0.72Ge0.28)缓冲层的工艺方案。实验结果表明,通过两步快速热退火,两个方案的工艺条件都能形成低阻的NiuPt1-uSivGe1-v和改善NiuPt1-uSivGe1-v/Si0.72Ge0.28的界面形貌。但相比较而言,在Si0.72Ge0.28上外延10 nm Si覆盖层的方案能够形成更好的NiuPt1-uSivGe1-v/Si0.72Ge0.28界面形貌。与没有改进的方案相比,该方案形成的肖特基接触更具有更低的肖特基接触势垒高度,更易形成欧姆接触。
The interracial morphology characteristics of NiuPt1-uSivGe1-v/Si0. 72 Ge0. 28 degraded due to the part stress release during forming the metal germanosilicide. The processes of the epitaxial thin Si cap layer and the epitaxial Si0.72Ge0.28 buffer layer grown on Si0.72Ge0.28 respectively were proposed. The test results show that after a two-step rapid thermal annealing process, the NiuPt1-uSivGe1-v compound with low sheet resistance was formed and the interfacial morphology of NiuPt1-uSivGe1-v/Si0. 72 Ge0. 28 was improved. However, it is clear that the wafer with 10 nm epitaxial silicon can form superior NiuPt1-uSivGe1-v/Si0. 72 Ge0. 28 interfacial morphology than that with epitaxial Si0.72Ge0.28 buffer. Compared to the process formed Schottky contact on Si0.72Ge0.28 directly, the process with 10 nm Si cap layer on Si0.72Ge0. 28 can form better ohmic contact with lower Schottky barrier height.
出处
《半导体技术》
CAS
CSCD
北大核心
2015年第1期49-52,67,共5页
Semiconductor Technology
基金
国家科技重大专项资助项目(2013ZX02303001-001)
关键词
锗硅化物
界面形貌
两步快速热退火
肖特基势垒高度
欧姆接触
germanosilicide
interfacial morphology
two-step rapid thermal annealing （RTA2）
Schottky barrier height
ohmic contact
