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分子器件的研究进展 被引量:6
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作者 李荣金 李洪祥 +1 位作者 汤庆鑫 胡文平 《物理》 CAS 北大核心 2006年第12期1003-1009,共7页
分子器件作为下一代电子器件近年来得到了迅速的发展.文章回顾了分子器件的发展历程和研究现状,并重点对分子导线、分子开关、分子整流器和分子晶体管等器件进行了介绍.
关键词 分子器件 分子导线 分子开关 分子整流器 分子晶体管
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Press-pack IGBTs for HVDC and FACTS 被引量:14
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作者 Robin Simpson Ashley Plumpton +3 位作者 Michael Varley Charles Tonner Paul Taylor Xiaoping Dai 《CSEE Journal of Power and Energy Systems》 SCIE 2017年第3期302-310,共9页
The popularity of insulated gate bipolar transistors(IGBTs)for use in high-voltage direct current(HVDC)transmission and flexible AC transmission systems(FACTS)is increasing.Unfortunately,for these applications wire-bo... The popularity of insulated gate bipolar transistors(IGBTs)for use in high-voltage direct current(HVDC)transmission and flexible AC transmission systems(FACTS)is increasing.Unfortunately,for these applications wire-bond IGBT technology has a number of shortcomings,such as insufficient current ratings for the most powerful schemes,and inability to fail to short-circuit.Press-pack IGBT technology,conversely,offers increased current ratings,and an inherent short-circuit failure mode,making it a more attractive choice for HVDC and FACTS.However,the design and manufacture of these devices requires a comprehensive understanding of the unique technical challenges,which differ markedly from those for wirebond modules or traditional pressure contact devices.Specific challenges include providing a high degree of mechanical protection for the IGBT chip against normal operating stresses.Furthermore,it is essential to achieve uniform contact pressure across each chip surface to ensure optimum performance.To achieve this,manufacturers have designed products that use rigid copper electrodes manufactured to tighter tolerances than for other pressure contact devices,such as thyristors,and products that use compliant electrodes,incorporating spring assemblies.Dynex is in the advanced stages of development of press-pack IGBT technology with demonstrated robust solutions for the technical challenges outlined in this paper.Design success has been achieved through the use of state-of-the-art simulations in conjunction with a long history of manufacturing expertise for bipolar and IGBT products.Finally,multiple press-pack IGBT variants are currently undergoing evaluation tests prior to product release. 展开更多
关键词 Flexible AC transmission systems HVDC transmission insulated gate bipolar transistors press-pack IGBT STATCOM VSC
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Recent advances in flexible and stretchable electronics, sensors and power sources 被引量:10
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作者 TOK Jeffrey B.-H. 《Science China Chemistry》 SCIE EI CAS 2012年第5期718-725,共8页
There has been ongoing keen interest to mold electronic devices into desired shapes and be laid on desired configurable surfaces. In specific, the ability to design materials that can bend, twist, compress and stretch... There has been ongoing keen interest to mold electronic devices into desired shapes and be laid on desired configurable surfaces. In specific, the ability to design materials that can bend, twist, compress and stretch repeatedly, while still able to maintain its full capability as conductors or electrodes, has led to numerous efforts to develop flexible and stretchable (bio)devices that are both technologically challenging and environmentally friendly (e.g. biodegradable). In this review, we highlight several recent significant results that have made impacts toward the field of flexible and stretchable electronics, sensors and power sources. 展开更多
关键词 organic transistors flexible electronics stretchable electronics electronic skin SENSOR
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单电子晶体管放大器的数值分析 被引量:7
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作者 沈波 蒋建飞 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1997年第8期626-630,共5页
本文基于单电子隧道效应晶体管的半经典模型,研究了电容耦会单电子隧道晶体管放大器的静态特性和小信号特性.结果表明:单电子晶体管放大器具有灵敏度高,功耗低等优点,缺点是由于几率工作,工作条件受到严格的限制.
关键词 单电子晶体管 放大器 单电子隧道效应
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基于碳纳米管的晶体管及其集成的研究进展 被引量:7
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作者 王晓峰 黄如 +1 位作者 傅云义 张兴 《功能材料与器件学报》 CAS CSCD 2004年第2期273-278,共6页
基于碳纳米管的场效应晶体管是目前研究的热点,是所有分子电子学器件中最有可能取代MOSFET,并维持摩尔定律的器件。本文对其基本原理、发展状况和重要性进行了简述,着重介绍了目前常用的撒落法和催化剂定位方法制备碳纳米管场效应管的... 基于碳纳米管的场效应晶体管是目前研究的热点,是所有分子电子学器件中最有可能取代MOSFET,并维持摩尔定律的器件。本文对其基本原理、发展状况和重要性进行了简述,着重介绍了目前常用的撒落法和催化剂定位方法制备碳纳米管场效应管的工艺流程以及结果,并介绍了碳纳米管的掺杂以及相关集成的研究进展。 展开更多
关键词 碳纳米管 场效应 晶体管 集成 掺杂
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Two-step heating synthesis of sub-3 millimeter-sized orthorhombic black phosphorus single crystal by chemical vapor transport reaction method 被引量:7
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作者 张子明 辛鑫 +3 位作者 严清峰 李强 杨轶 任天令 《Science China Materials》 SCIE EI CSCD 2016年第2期122-134,共13页
A facile and green strategy to synthesize orthorhombic black phosphorus(o-BP) single crystals with high yield(~90%) and large size(sub-3 millimeter) is presented. The strategy was based on a two-step heating chemical ... A facile and green strategy to synthesize orthorhombic black phosphorus(o-BP) single crystals with high yield(~90%) and large size(sub-3 millimeter) is presented. The strategy was based on a two-step heating chemical vapor transport(CVT) reaction method, in which tin and iodine(Sn/I2) was used as mineralization additives and red phosphorus as precursor. Tin phosphide was the only by-product captured at the end of reaction, which greatly simplified the subsequent separation and purification processes of o-BP single crystals. The full width at half maximum(FWHM) of X-ray rocking curve of the as-grown o-BP was 21.65 arc sec, indicating its respectable crystalline quality. A bottom electrode structure field-effect transistor(FET) based on the multilayer phosphorene mechanically exfoliated from the as-grown o-BP single crystal was successfully fabricated through an all-dry transfer technique. Impressively, the FET based on a 6 nm thick multilayer(approximate 12 layers) phosphorene exhibited a record high hole mobility(μp) of 1744 cm2 V-1 s-1 and an admirable on/off current switching ratio(Ion/Ioff) of ~104, which further proved the high-quality of the o-BP single crystals synthesized by the twostep heating CVT reaction method using the simple Sn/I2/red phosphorus system. 展开更多
关键词 ORTHORHOMBIC BLACK PHOSPHORUS single crystal chemical vapor transport TWO-STEP HEATING FIELD-EFFECT transistors
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Bionics and Structural Biology:A Novel Approach for Bio-energy Production 被引量:6
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作者 C.Karthikeyan R.Krishnan S.Adline Princy 《Journal of Bionic Engineering》 SCIE EI CSCD 2008年第1期25-32,共8页
Cellular metabolism is a very complex process. The biochemical pathways are fundamental structures of biology. These pathways possess a number of regeneration steps which facilitate energy shuttling on a massive scale... Cellular metabolism is a very complex process. The biochemical pathways are fundamental structures of biology. These pathways possess a number of regeneration steps which facilitate energy shuttling on a massive scale. This facilitates the biochemical pathways to sustain the energy currency of the cells. This concept has been mimicked using electronic circuit components and it has been used to increase the efficiency of bio-energy generation. Six of the carbohydrate biochemical pathways have been chosen in which glycolysis is the principle pathway. All the six pathways are interrelated and coordinated in a complex manner. Mimic circuits have been designed for all the six biochemical pathways. The components of the metabolic pathways such as enzymes, cofactors etc., are substituted by appropriate electronic circuit components. Enzymes are related to the gain of transistors by the bond dissociation energies of enzyme-substrate molecules under consideration. Cofactors and coenzymes are represented by switches and capacitors respectively. Resistors are used for proper orientation of the circuits. The energy obtained from the current methods employed for the decomposition of organic matter is used to trigger the mimic circuits. A similar energy shuttle is observed in the mimic circuits and the percentage rise for each cycle of circuit functioning is found to be 78.90. The theoretical calculations have been made using a sample of domestic waste weighing 1.182 kg. The calculations arrived at finally speak of the efficiency of the novel methodology employed. 展开更多
关键词 BIONICS structural biology carbohydrate metabolism bio-chemical pathways mimic circuits transistors
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Monolayer organic field-effect transistors 被引量:7
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作者 Jie Liu Lang Jiang +2 位作者 Wenping Hu Yunqi Liu Daoben Zhu 《Science China Chemistry》 SCIE EI CAS CSCD 2019年第3期313-330,共18页
Monolayer organic field-effect transistors(OFETs) are attracting worldwide interest in device physics and novel applications due to their ultrathin active layer for two-dimensional charge transport. The monolayer film... Monolayer organic field-effect transistors(OFETs) are attracting worldwide interest in device physics and novel applications due to their ultrathin active layer for two-dimensional charge transport. The monolayer films are generally prepared by thermal evaporation, the Langmuir technique or self-assembly process, etc., but their electrical performance is relatively lower than corresponding thick films. From 2011, the performance of monolayer OFETs has been boosted by using the monolayer molecular crystals(MMCs) as active channels, which opened up a new era for monolayer OFETs. In this review, recent progress of monolayer OFETs, including the preparation of monolayer films, their OFET performance and applications are summarized.Finally, perspectives of monolayer OFETs in the near future are also discussed. 展开更多
关键词 MONOLAYER films organic FIELD-EFFECT transistors MONOLAYER molecular crystals(MMCs) MOBILITY
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石墨烯在电气领域的研究与应用综述 被引量:8
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作者 庞思远 刘希喆 《电工技术学报》 EI CSCD 北大核心 2018年第8期1705-1722,共18页
石墨烯是一种新型二维碳材料,其特殊的晶格结构以及碳元素本身的性质使其在电、热、光、力学等方面都拥有优异的性能,在电气领域的若干分支领域都有着巨大的应用潜力。介绍石墨烯的结构和常用制备方法,就石墨烯在电气领域中的锂离子电... 石墨烯是一种新型二维碳材料,其特殊的晶格结构以及碳元素本身的性质使其在电、热、光、力学等方面都拥有优异的性能,在电气领域的若干分支领域都有着巨大的应用潜力。介绍石墨烯的结构和常用制备方法,就石墨烯在电气领域中的锂离子电池领域、超级电容器领域、晶体管领域以及电磁屏蔽等领域的研究现状和应用机制方面分别进行综述,最后总结归纳认为石墨烯今后的研究重点在于其生产工艺的优化,以更好地改善石墨烯的自身结构以及其与其他材料的复合形态。 展开更多
关键词 石墨烯 锂离子电池 超级电容器 晶体管 电磁屏蔽
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Piezotronic neuromorphic devices:principle,manufacture,and applications
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作者 Xiangde Lin Zhenyu Feng +5 位作者 Yao Xiong Wenwen Sun Wanchen Yao Yichen Wei Zhong Lin Wang Qijun Sun 《International Journal of Extreme Manufacturing》 SCIE EI CAS CSCD 2024年第3期363-385,共23页
With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous sys... With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann bottleneck.Piezotronic neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner,with the capability to sense/store/process information of external stimuli.In this review,we have presented the piezotronic neuromorphic devices(which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure)and discussed their operating mechanisms and related manufacture techniques.Secondly,we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications,including bionic sensing,information storage,logic computing,and electrical/optical artificial synapses.Finally,in the context of future development,challenges,and perspectives,we have discussed how to modulate novel neuromorphic devices with piezotronic effects more effectively.It is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things,AI,biomedical engineering,etc. 展开更多
关键词 piezotronics neuromorphic devices strain-gated transistors piezoelectric nanogenerators synaptic transistors
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A full resolution autostereoscopic 3D display based on polarizer parallax barrier 被引量:6
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作者 王琼华 陶宇虹 +1 位作者 赵悟翔 李大海 《Chinese Optics Letters》 SCIE EI CAS CSCD 2010年第1期22-23,共2页
A full resolution autostereoscopic three-dimensional (3D) display prototype is developed. It is composed of a time division thin film transistor liquid crystal display panel with an optical controlled birefringence ... A full resolution autostereoscopic three-dimensional (3D) display prototype is developed. It is composed of a time division thin film transistor liquid crystal display panel with an optical controlled birefringence liquid crystal polarization switch and a polarizer parallax barrier. Fast driving circuits operating at 120-Hz frame rate are fabricated. The 3D images on the display have the same resolution as the corresponding two-dimensional images, which is significantly different from conventional parallax barrier autostereoscopic 3D displays having degraded 3D image resolution. 展开更多
关键词 ASTROPHYSICS Geometrical optics Image resolution Liquid crystal displays Liquid crystals Optical instruments Thin film transistors
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Inorganic and Organic Solution-Processed Thin Film Devices 被引量:6
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作者 Morteza Eslamian 《Nano-Micro Letters》 SCIE EI CAS 2017年第1期16-38,共23页
Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materia... Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials,conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique properties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution. 展开更多
关键词 Organic electronics Photovoltaics Thin film transistors Thermoelectric devices Organic light-emitting diodes Smart materials Sensors and actuators Solution-processed methods
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Organic thin-film transistors and related devices in life and health monitoring 被引量:1
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作者 Chenfang Sun Tie Wang 《Nano Research》 SCIE EI CSCD 2024年第2期426-444,共19页
The early determination of disease-related biomarkers can significantly improve the survival rate of patients.Thus,a series of explorations for new diagnosis technologies,such as optical and electrochemical methods,ha... The early determination of disease-related biomarkers can significantly improve the survival rate of patients.Thus,a series of explorations for new diagnosis technologies,such as optical and electrochemical methods,have been devoted to life and health monitoring.Organic thin-film transistor(OTFT),as a state-of-the-art nano-sensing technology,has attracted significant attention from construction to application owing to the merits of being label-free,low-cost,facial,and rapid detection with multi-parameter responses.Nevertheless,interference from non-specific adsorption is inevitable in complex biological samples such as body liquid and exhaled gas,so the reliability and accuracy of the biosensor need to be further improved while ensuring sensitivity,selectivity,and stability.Herein,we overviewed the composition,mechanism,and construction strategies of OTFTs for the practical determination of disease-related biomarkers in both body fluids and exhaled gas.The results show that the realization of bio-inspired applications will come true with the rapid development of high-effective OTFTs and related devices. 展开更多
关键词 organic thin-film transistors biosensors biomarkers organic bioelectronics organic semiconductors healthcare
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Visible-light stimulated synaptic plasticity in amorphous indium−gallium−zinc oxide enabled by monocrystalline double perovskite for high-performance neuromorphic applications 被引量:3
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作者 Fu Huang Feier Fang +9 位作者 Yue Zheng Qi You Henan Li Shaofan Fang Xiangna Cong Ke Jiang Ye Wang Cheng Han Wei Chen Yumeng Shi 《Nano Research》 SCIE EI CSCD 2023年第1期1304-1312,共9页
Photoelectric synaptic devices have been considered as one of the key components in artificial neuromorphic systems due to their excellent capability to emulate the functions of visual neurons,such as light perception... Photoelectric synaptic devices have been considered as one of the key components in artificial neuromorphic systems due to their excellent capability to emulate the functions of visual neurons,such as light perception and image processing.Herein,we demonstrate an optically-stimulated artificial synapse with a clear photoresponse from ultraviolet to visible light,which is established on a novel heterostructure consisting of monocrystalline Cs2AgBiBr6 perovskite and indium–gallium–zinc oxide(IGZO)thin film.As compared with pure IGZO,the heterostructure significantly enhances the photoresponse and corresponding synaptic plasticity of the devices,which originate from the superior visible absorption of single-crystal Cs2AgBiBr6 and effective interfacial charge transfer from Cs2AgBiBr6 to IGZO.A variety of synaptic behaviors are realized on the fabricated thin-film transistors,including excitatory postsynaptic current,paired pulse facilitation,short-term,and long-term plasticity.Furthermore,an artificial neural network is simulated based on the photonic potentiation and electrical depression effects of synaptic devices,and an accuracy rate up to 83.8%±1.2%for pattern recognition is achieved.This finding promises a simple and efficient way to construct photoelectric synaptic devices with tunable spectrum for future neuromorphic applications. 展开更多
关键词 artificial optoelectronic synapse monocrystalline Cs2AgBiBr6 thin-film transistors ultraviolet-to-visible neuromorphic computing
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Side-chain effect of organic semiconductors in OFET-based chemical sensors 被引量:7
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作者 Dapeng Liu Yingli Chu +1 位作者 Xiaohan Wu Jia Huang 《Science China Materials》 SCIE EI CSCD 2017年第10期977-984,共8页
Organic field-effect transistors(OFETs) offer great potential applications in chemical and biological sensing for homeland security,environmental monitoring,industry manufacturing,and medical/biological detection. M... Organic field-effect transistors(OFETs) offer great potential applications in chemical and biological sensing for homeland security,environmental monitoring,industry manufacturing,and medical/biological detection. Many studies concentrate on sensitivity and selectivity improvement of OFET-based sensors. We report four organic semiconductors with different alkyl side chain lengths but the same π-conjugated core structure for OFETs. Our work focuses on the molecular structure of organic semiconductors(OSCs). Alkyl side chains can hinder the diffusion of ammonia into the OSCs layer,which blocks the interaction between ammonia and conducting channel. The result also reveals the relationship between the alky chain and the film thickness in sensitivity control. These results are expected to be a guide to the molecular design of organic semiconductors and the choice of OSCs. 展开更多
关键词 organic field-effect transistors chemical sensor side alkyl chain
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IGBT特性分析与驱动参数的优化配置 被引量:3
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作者 张秉仁 林君 《吉林大学学报(信息科学版)》 CAS 2001年第3期29-33,共5页
详尽分析了 IGBT的特性及驱动条件 ,概述了 IGBT有效保护的要求 ,以 TEM- 2型电磁法发射机中的全桥变换电路及 GT60 M30 2型 IGBT为例 ,对驱动参数的优化配置进行了较为详细的研究 ,并给出了 TEM-
关键词 晶体管 发射机 绝缘栅双极型晶体管 开关特性 死区时间 驱动电流
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Recent progresses of NMOS and CMOS logic functions based on two-dimensional semiconductors 被引量:7
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作者 Lingan Kong Yang Chen Yuan Liu 《Nano Research》 SCIE EI CAS CSCD 2021年第6期1768-1783,共16页
Metal-oxide-semiconductor field effect transistors(MOSFET)based on two-dimensional(2D)semiconductors have attracted extensive attention owing to their excellent transport properties,atomically thin geometry,and tunabl... Metal-oxide-semiconductor field effect transistors(MOSFET)based on two-dimensional(2D)semiconductors have attracted extensive attention owing to their excellent transport properties,atomically thin geometry,and tunable bandgaps.Besides improving the transistor performance of individual device,lots of efforts have been devoted to achieving 2D logic functions or integrated circuit towards practical application.In this review,we discussed the recent progresses of 2D-based logic circuit.We will first start with the different methods for realization of n-type metal-oxide-semiconductor(NMOS)-only(or p-type metal-oxide-semiconductor(PMOS)-only)logic circuit.Next,various device polarity control and complementary-metal-oxide-semiconductor(CMOS)approaches are summarized,including utilizing different 2D semiconductors with intrinsic complementary doping,charge transfer doping,contact engineering,and electrostatics doping.We will discuss the merits and drawbacks of each approach,and lastly conclude with a short perspective on the challenges and future developments of 2D logic circuit. 展开更多
关键词 field effect transistors two-dimensional semiconductors logic circuit complementary-metal-oxide-semiconductor(CMOS) polarity control
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Design and Analysis of a Network Traffic Analysis Tool: NetFlow Analyzer 被引量:1
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作者 Rafia Islam Vishnu Vardhan Patamsetti +4 位作者 Aparna Gadhi Ragha Madhavi Gondu Chinna Manikanta Bandaru Sai Chaitanya Kesani Olatunde Abiona 《International Journal of Communications, Network and System Sciences》 2023年第2期21-29,共9页
A network analyzer can often comprehend many protocols, which enables it to display talks taking place between hosts over a network. A network analyzer analyzes the device or network response and measures for the oper... A network analyzer can often comprehend many protocols, which enables it to display talks taking place between hosts over a network. A network analyzer analyzes the device or network response and measures for the operator to keep an eye on the network’s or object’s performance in an RF circuit. The purpose of the following research includes analyzing the capabilities of NetFlow analyzer to measure various parts, including filters, mixers, frequency sensitive networks, transistors, and other RF-based instruments. NetFlow Analyzer is a network traffic analyzer that measures the network parameters of electrical networks. Although there are other types of network parameter sets including Y, Z, & H-parameters, these instruments are typically employed to measure S-parameters since transmission & reflection of electrical networks are simple to calculate at high frequencies. These analyzers are widely employed to distinguish between two-port networks, including filters and amplifiers. By allowing the user to view the actual data that is sent over a network, packet by packet, a network analyzer informs you of what is happening there. Also, this research will contain the design model of NetFlow Analyzer that Measurements involving transmission and reflection use. Gain, insertion loss, and transmission coefficient are measured in transmission measurements, whereas return loss, reflection coefficient, impedance, and other variables are measured in reflection measurements. These analyzers’ operational frequencies vary from 1 Hz to 1.5 THz. These analyzers can also be used to examine stability in measurements of open loops, audio components, and ultrasonics. 展开更多
关键词 Network Analyzer INSTRUMENTS PARAMETER RF Circuit transistors Traffic Analysis Bandwidth Measurement
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Solution-grown aligned crystals of diketopyrrolopyrroles(DPP)-based small molecules:Rough surfaces and relatively low charge mobility 被引量:5
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作者 Zhuo-Ting Huang Cong-Cheng Fan +5 位作者 Guo-Biao Xue Jia-Ke Wu Shuang Liu Huan-Bin Li Hong-Zheng Chen Han-Ying Li 《Chinese Chemical Letters》 SCIE CAS CSCD 2016年第4期523-526,共4页
Field-effect transistors(FETs) of three diketopyrrolopyrroles(DPP)-based small molecules, 3,6-bis(5-phenylthiophene-2-yl)-2,5-bis(2-ethylhexyl)pyrrolopyrrole-1,4-dione(PDPPP), 3,6-bis(5-(4-fluorophenyl)th... Field-effect transistors(FETs) of three diketopyrrolopyrroles(DPP)-based small molecules, 3,6-bis(5-phenylthiophene-2-yl)-2,5-bis(2-ethylhexyl)pyrrolopyrrole-1,4-dione(PDPPP), 3,6-bis(5-(4-fluorophenyl)thiophene-2-yl)-2,5-bis(2-ethylhexyl)pyrrolo pyrrole-1,4-dione(FPDPPPF) and 3,6-bis(5-(4-n-butylphenyl)thiophene-2-yl)-2,5-bis(2-ethylhexyl)pyrrolo pyrrole-1,4-dione(Bu PDPPPBu), have been studied in this work. Well aligned crystals of the three molecules were grown from para-xylene by droplet-pinned crystallization method. FETs based on these aligned crystals exhibit a hole mobility up to0.19 cm^2 V 1s 1and electron mobility up to 0.008 cm^2 V 1s 1. The achieved hole mobility is of the same order of magnitude as reported highest hole mobility for DPP-based small molecules, but it is much lower than that of the high-performance DPP-based polymers. The relative low mobility is mainly attributed to the rough crystal surfaces with steps and, thus, non-smooth charge transport channels at the interfaces between the crystals and the dielectrics. This work has implications for understanding the low charge mobility of DPP-based small molecules. 展开更多
关键词 DIKETOPYRROLOPYRROLE CRYSTALS Solution processing Organic field-effect transistors MORPHOLOGY
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LD-pumped high repetition rate Q-switched Nd:YVO_4 laser by using La_3Ga_5SiO_(14) single crystal electro-optic modulator 被引量:4
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作者 王春雨 臧华国 +2 位作者 李小莉 陆雨田 朱小磊 《Chinese Optics Letters》 SCIE EI CAS CSCD 2006年第6期329-331,共3页
A diode-end-pumped electro-optic (EO) Q-switched Nd:YVO4 laser operating at repetition rate of 10 kpps (pulses per second) was reported. A block of La3Ga5SiO14 (LGS) single crystal was used as a Q-switch and th... A diode-end-pumped electro-optic (EO) Q-switched Nd:YVO4 laser operating at repetition rate of 10 kpps (pulses per second) was reported. A block of La3Ga5SiO14 (LGS) single crystal was used as a Q-switch and the driver was a metal oxide semiconductor field effect transistor (MOS-FET) pulser of high repetition rate and high voltage. At continuous wave (CW) operation, the slope efficiency of the laser was 46%, and maximum optical-to-optical efficiency was 38.5%. Using an output coupler with transmission of 70%, a 10-kpps Q-switched pulse train with 0.4-mJ monopulse energy and 8.2-ns pulse width was achieved, the optical conversion efficiency was around 15%, and the beam quality M^2 factor was less than 1.2. 展开更多
关键词 Electric potential Electrooptical devices Energy conversion Field effect transistors Laser pulses Modulators MOSFET devices Pumping (laser) Single crystals Transmissions
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