In order to perform data acquisition and avoid unwanted over-current damage to the power supply, a convenient and real-time method of experimentally investigating repetitive nanosecond-pulse breakdown in polymer diele...In order to perform data acquisition and avoid unwanted over-current damage to the power supply, a convenient and real-time method of experimentally investigating repetitive nanosecond-pulse breakdown in polymer dielectric samples is presented. The measurement-acquisition and control system not only records breakdown voltage and current, and time-to-breakdown duration, but also provides a real-time power-off protection for the power supply. Furthermore, the number of applied pulses can be calculated by the product of the time-to-breakdown duration and repetition rate. When the measured time-to-breakdown duration error is taken into account, the repetition rate of applied nanosecond-pulses should be below 40kHz. In addition, some experimental data on repetitive nanosecond-pulse breakdown of polymer films are presented and discussed.展开更多
利用等效1 MeV中子和γ射线对1200 V SiC功率MOSFET进行辐射,研究了电离损伤和位移损伤对器件的影响,并分析了辐射后器件栅氧长期可靠性。结果表明:中子辐射后器件导通电阻发生明显退化,与辐射引入近界面缺陷降低载流子寿命和载流子迁...利用等效1 MeV中子和γ射线对1200 V SiC功率MOSFET进行辐射,研究了电离损伤和位移损伤对器件的影响,并分析了辐射后器件栅氧长期可靠性。结果表明:中子辐射后器件导通电阻发生明显退化,与辐射引入近界面缺陷降低载流子寿命和载流子迁移率有关。时间依赖的介质击穿(TDDB)结果表明,栅泄漏电流呈现先增加后降低趋势,与空穴捕获和电子捕获效应有关。中子辐射后栅漏电演化形式未改变,但氧化层击穿时间增加,这是中子辐射缺陷增加了Fowler-Nordheim(FN)隧穿势垒的缘故。总剂量辐射在器件氧化层内引入陷阱电荷,使得器件阈值电压负向漂移。随后的TDDB测试表明,与中子辐射一致,总剂量辐射未改变栅漏电演化形式,但氧化层击穿时间提前。这是总剂量辐射在氧化层内引入额外空穴陷阱和中性电子陷阱的缘故。展开更多
For many years, a Lorentz factor of L = 1/3 has been used to describe the local electric field in thin amorphous dielectrics. However, the exact meaning of thin has been unclear. The local electric field E<sub>l...For many years, a Lorentz factor of L = 1/3 has been used to describe the local electric field in thin amorphous dielectrics. However, the exact meaning of thin has been unclear. The local electric field E<sub>loc</sub> modeling presented in this work indicates that L = 1/3 is indeed valid for very thin solid dielectrics (t<sub>diel</sub> ≤ 20 monolayers) but significant deviations from L = 1/3 start to occur for thicker dielectrics. For example, L ≈ 2/3 for dielectric thicknesses of t<sub>diel</sub> = 50 monolayers and increases to L ≈ 1 for dielectric thicknesses t<sub>diel</sub> > 200 monolayers. The increase in L with t<sub>diel</sub> means that the local electric fields are significantly higher in thicker dielectrics and explains why the breakdown strength E<sub>bd</sub> of solid polar dielectrics generally reduces with dielectric thickness t<sub>diel</sub>. For example, E<sub>bd</sub> for SiO<sub>2</sub> reduces from approximately E<sub>bd</sub> ≈ 25 MV/cm at t<sub>diel</sub> = 2 nm to E<sub>bd</sub> ≈ 10 MV/cm at t<sub>diel</sub> = 50 nm. However, while E<sub>bd</sub> for SiO<sub>2</sub> reduces with t<sub>diel</sub>, all SiO<sub>2</sub> thicknesses are found to breakdown at approximately the same local electric field (E<sub>loc</sub>)<sub>bd</sub> ≈ 40 MV/cm. This corresponds to a coordination bond strength of 2.7 eV for the silicon-ion to transition from four-fold to three-fold coordination in the tetrahedral structure.展开更多
This paper considers a Manpower system where “exits” of employed personnel produce some wastage or loss. This system monitors these wastages over the sequence of exit epochs {t0 = 0 and tk;k = 1, 2,…} that form a r...This paper considers a Manpower system where “exits” of employed personnel produce some wastage or loss. This system monitors these wastages over the sequence of exit epochs {t0 = 0 and tk;k = 1, 2,…} that form a recurrent process and admit recruitment when the cumulative loss of man hours crosses a threshold level Y, which is also called the breakdown level. It is assumed that the inter-exit times Tk = tk-1 - tk, k = 1, 2,… are independent and identically distributed random variables with a common cumulative distribution function (CDF) B(t) = P(Tk t) which has a tail 1 – B(t) behaving like t-v with 1 v as t → ∞. The amounts {Xk} of wastages incurred during these inter-exit times {Tk} are independent and identically distributed random variables with CDF P(Xk X) = G(x) and Y is distributed, independently of {Xk} and {tk}, as an exponentiated exponential law with CDF H(y) = P(Y y) = (1 - e-λy)n. The mean waiting time to break down of the system has been obtained assuming B(t) to be heavy tailed and as well as light tailed. For the exponential case of G(x), a comparative study has also been made between heavy tailed mean waiting time to break down and light tailed mean waiting time to break down values. The recruitment policy operating under the heavy tailed case is shown to be more economical in all types of manpower systems.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 50707032 and 50437020)the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KGCX2-YW-339)the State Key Laboratory of Controland Simulation of Power System and Generation Equipment in Tsinghua University (Grant No. SKLD09KZ05)
文摘In order to perform data acquisition and avoid unwanted over-current damage to the power supply, a convenient and real-time method of experimentally investigating repetitive nanosecond-pulse breakdown in polymer dielectric samples is presented. The measurement-acquisition and control system not only records breakdown voltage and current, and time-to-breakdown duration, but also provides a real-time power-off protection for the power supply. Furthermore, the number of applied pulses can be calculated by the product of the time-to-breakdown duration and repetition rate. When the measured time-to-breakdown duration error is taken into account, the repetition rate of applied nanosecond-pulses should be below 40kHz. In addition, some experimental data on repetitive nanosecond-pulse breakdown of polymer films are presented and discussed.
文摘利用等效1 MeV中子和γ射线对1200 V SiC功率MOSFET进行辐射,研究了电离损伤和位移损伤对器件的影响,并分析了辐射后器件栅氧长期可靠性。结果表明:中子辐射后器件导通电阻发生明显退化,与辐射引入近界面缺陷降低载流子寿命和载流子迁移率有关。时间依赖的介质击穿(TDDB)结果表明,栅泄漏电流呈现先增加后降低趋势,与空穴捕获和电子捕获效应有关。中子辐射后栅漏电演化形式未改变,但氧化层击穿时间增加,这是中子辐射缺陷增加了Fowler-Nordheim(FN)隧穿势垒的缘故。总剂量辐射在器件氧化层内引入陷阱电荷,使得器件阈值电压负向漂移。随后的TDDB测试表明,与中子辐射一致,总剂量辐射未改变栅漏电演化形式,但氧化层击穿时间提前。这是总剂量辐射在氧化层内引入额外空穴陷阱和中性电子陷阱的缘故。
文摘For many years, a Lorentz factor of L = 1/3 has been used to describe the local electric field in thin amorphous dielectrics. However, the exact meaning of thin has been unclear. The local electric field E<sub>loc</sub> modeling presented in this work indicates that L = 1/3 is indeed valid for very thin solid dielectrics (t<sub>diel</sub> ≤ 20 monolayers) but significant deviations from L = 1/3 start to occur for thicker dielectrics. For example, L ≈ 2/3 for dielectric thicknesses of t<sub>diel</sub> = 50 monolayers and increases to L ≈ 1 for dielectric thicknesses t<sub>diel</sub> > 200 monolayers. The increase in L with t<sub>diel</sub> means that the local electric fields are significantly higher in thicker dielectrics and explains why the breakdown strength E<sub>bd</sub> of solid polar dielectrics generally reduces with dielectric thickness t<sub>diel</sub>. For example, E<sub>bd</sub> for SiO<sub>2</sub> reduces from approximately E<sub>bd</sub> ≈ 25 MV/cm at t<sub>diel</sub> = 2 nm to E<sub>bd</sub> ≈ 10 MV/cm at t<sub>diel</sub> = 50 nm. However, while E<sub>bd</sub> for SiO<sub>2</sub> reduces with t<sub>diel</sub>, all SiO<sub>2</sub> thicknesses are found to breakdown at approximately the same local electric field (E<sub>loc</sub>)<sub>bd</sub> ≈ 40 MV/cm. This corresponds to a coordination bond strength of 2.7 eV for the silicon-ion to transition from four-fold to three-fold coordination in the tetrahedral structure.
文摘This paper considers a Manpower system where “exits” of employed personnel produce some wastage or loss. This system monitors these wastages over the sequence of exit epochs {t0 = 0 and tk;k = 1, 2,…} that form a recurrent process and admit recruitment when the cumulative loss of man hours crosses a threshold level Y, which is also called the breakdown level. It is assumed that the inter-exit times Tk = tk-1 - tk, k = 1, 2,… are independent and identically distributed random variables with a common cumulative distribution function (CDF) B(t) = P(Tk t) which has a tail 1 – B(t) behaving like t-v with 1 v as t → ∞. The amounts {Xk} of wastages incurred during these inter-exit times {Tk} are independent and identically distributed random variables with CDF P(Xk X) = G(x) and Y is distributed, independently of {Xk} and {tk}, as an exponentiated exponential law with CDF H(y) = P(Y y) = (1 - e-λy)n. The mean waiting time to break down of the system has been obtained assuming B(t) to be heavy tailed and as well as light tailed. For the exponential case of G(x), a comparative study has also been made between heavy tailed mean waiting time to break down and light tailed mean waiting time to break down values. The recruitment policy operating under the heavy tailed case is shown to be more economical in all types of manpower systems.