报道了一种基于厚膜工艺的氢气传感器。首先采用丝网印刷工艺制作铂加热器线条,再在其上面分别覆有纳米催化剂/氧化铝形成气敏元件、涂覆纳米氧化铝构成补偿元件,最后制成氢气传感器。测试结果表明:传感器灵敏度大于21 m V/1%H2,响应时...报道了一种基于厚膜工艺的氢气传感器。首先采用丝网印刷工艺制作铂加热器线条,再在其上面分别覆有纳米催化剂/氧化铝形成气敏元件、涂覆纳米氧化铝构成补偿元件,最后制成氢气传感器。测试结果表明:传感器灵敏度大于21 m V/1%H2,响应时间小于30 s,非线性和重复性优于2%。展开更多
A new sol-gel process is applied to fabricate the BST （BaxSr1-xTiO3） sol and nano-powder of La-Mn-Al co-doping with Ba/Sr ratio 65/35, and the BST thick film is prepared in the Pt/Ti/SiO2/Si substrate. The powder an...A new sol-gel process is applied to fabricate the BST （BaxSr1-xTiO3） sol and nano-powder of La-Mn-Al co-doping with Ba/Sr ratio 65/35, and the BST thick film is prepared in the Pt/Ti/SiO2/Si substrate. The powder and thick film are characterized by X-ray diffraction and transmission electron microscope. The influence of La-Mn-Al co-doping on the dielectric properties and micro-structure of BST thick film is analyzed. The results show that the La, Mn, and Al ions can take an obvious restraint on the growth of BaSrTiO3 grains. The polycrystalline particles come into being during the crystallization of thick film, which may improve the uniformity and compactness of thick film. The influence of unequal-valence and doping amount on the leakage current, dielectric loss, and dielectric property are mainly discussed. The dielectric constant and dielectric loss of thick film are 1200 and 0.03, respectively, in the case of 1mol% La doping, 2mol% Mn doping, and 1mol% Al doping.展开更多
基金supported by the National High Technology Research and Development Program of China under Grant No2007AA032120the National Natural Science Foundation of China under Grant No 60777043
文摘A new sol-gel process is applied to fabricate the BST （BaxSr1-xTiO3） sol and nano-powder of La-Mn-Al co-doping with Ba/Sr ratio 65/35, and the BST thick film is prepared in the Pt/Ti/SiO2/Si substrate. The powder and thick film are characterized by X-ray diffraction and transmission electron microscope. The influence of La-Mn-Al co-doping on the dielectric properties and micro-structure of BST thick film is analyzed. The results show that the La, Mn, and Al ions can take an obvious restraint on the growth of BaSrTiO3 grains. The polycrystalline particles come into being during the crystallization of thick film, which may improve the uniformity and compactness of thick film. The influence of unequal-valence and doping amount on the leakage current, dielectric loss, and dielectric property are mainly discussed. The dielectric constant and dielectric loss of thick film are 1200 and 0.03, respectively, in the case of 1mol% La doping, 2mol% Mn doping, and 1mol% Al doping.
