A magnetic field sensor based on nano-polysilicon thin films transistors(TFTs) with Hall probes is proposed.The magnetic field sensors are fabricated on <100> orientation high resistivity(ρ>500Ω·cm) si...A magnetic field sensor based on nano-polysilicon thin films transistors(TFTs) with Hall probes is proposed.The magnetic field sensors are fabricated on <100> orientation high resistivity(ρ>500Ω·cm) silicon substrates by using CMOS technology,which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers.The experimental results show that when V_(DS) = 5.0 V,the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length-width ratios of 160μm/80μm,320μm/80μm and 480μm/80μm are 78 mV/T,55 mV/T and 34 mV/T,respectively.Under the same conditions,the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers.展开更多
党的十八大报告将"全面推进依法治国"确立为推进政治建设和政治体制改革的重要任务,而立法工作是其中最重要的基础工作。立法工作相关信息化系统的建设为立法工作提供了重要技术支撑,而随着立法工作中各项业务系统的联系性需...党的十八大报告将"全面推进依法治国"确立为推进政治建设和政治体制改革的重要任务,而立法工作是其中最重要的基础工作。立法工作相关信息化系统的建设为立法工作提供了重要技术支撑,而随着立法工作中各项业务系统的联系性需要更加紧密,集成度要求越来越高,信息资源的共享范围需要越来越广,使得各业务系统的互联互通和流程规范化等问题成为了立法工作信息化建设必须要面对的一个关键问题。单个的业务系统拓展、功能强化、硬件升级已经不能满足要求,而基于ESB(企业服务总线enterprise service bus)的架构平台,以服务作为基本管理单元提供了很好的解决方案,它可以消除不同业务系统之间的技术差异,让不同业务系统协调运作,从而实现不同业务之间的通信与资源整合。展开更多
A split-drain magnetic field-effect transistor （MAGFET） based on a nano-polysilicon thin film transistor （TFT） is proposed, which contains one source, two drains and one gate. The sensor chips were fabricated on ...A split-drain magnetic field-effect transistor （MAGFET） based on a nano-polysilicon thin film transistor （TFT） is proposed, which contains one source, two drains and one gate. The sensor chips were fabricated on （100） high resistivity silicon substrate by CMOS technology. When drain-source voltage equals 5.0 V and length and width ratio of the TFT channel is 80 μm/160 μm, the current and voltage magnetic sensitivities of the split-drain MAGFET based on the TFT are 0.018 mA/T and 55 mV/T, respectively. Through adopting nano-polysilicon thin films and nano-polysilicon thin films/high resistivity silicon heterojunction interfaces as the magnetic sensing layers, it is possible to realize detection of the external magnetic field. The test results show that magnetic sensitivity of the split-drain MAGFET can be improved significantly.展开更多
基金supported by the National Natural Science Foundation of China(No.61006057)the Foundation for University Young Key Teacher of Heilongjiang Province,China(No.1251G046)the Excellent Youth Foundation of Heilongjiang University,China(No.JCL201007)
文摘A magnetic field sensor based on nano-polysilicon thin films transistors(TFTs) with Hall probes is proposed.The magnetic field sensors are fabricated on <100> orientation high resistivity(ρ>500Ω·cm) silicon substrates by using CMOS technology,which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers.The experimental results show that when V_(DS) = 5.0 V,the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length-width ratios of 160μm/80μm,320μm/80μm and 480μm/80μm are 78 mV/T,55 mV/T and 34 mV/T,respectively.Under the same conditions,the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers.
文摘党的十八大报告将"全面推进依法治国"确立为推进政治建设和政治体制改革的重要任务,而立法工作是其中最重要的基础工作。立法工作相关信息化系统的建设为立法工作提供了重要技术支撑,而随着立法工作中各项业务系统的联系性需要更加紧密,集成度要求越来越高,信息资源的共享范围需要越来越广,使得各业务系统的互联互通和流程规范化等问题成为了立法工作信息化建设必须要面对的一个关键问题。单个的业务系统拓展、功能强化、硬件升级已经不能满足要求,而基于ESB(企业服务总线enterprise service bus)的架构平台,以服务作为基本管理单元提供了很好的解决方案,它可以消除不同业务系统之间的技术差异,让不同业务系统协调运作,从而实现不同业务之间的通信与资源整合。
基金Project supported by the National Natural Science Foundation of China(No.61006057)the China Postdoctoral Science Foundation Funded Project(No.2013M530163)+1 种基金the Natural Science Foundation of Heilongjiang Province(No.F201433)the Modern Sensor Technology Innovation Team for College of Heilongjiang Province(No.2012TD007)
文摘A split-drain magnetic field-effect transistor （MAGFET） based on a nano-polysilicon thin film transistor （TFT） is proposed, which contains one source, two drains and one gate. The sensor chips were fabricated on （100） high resistivity silicon substrate by CMOS technology. When drain-source voltage equals 5.0 V and length and width ratio of the TFT channel is 80 μm/160 μm, the current and voltage magnetic sensitivities of the split-drain MAGFET based on the TFT are 0.018 mA/T and 55 mV/T, respectively. Through adopting nano-polysilicon thin films and nano-polysilicon thin films/high resistivity silicon heterojunction interfaces as the magnetic sensing layers, it is possible to realize detection of the external magnetic field. The test results show that magnetic sensitivity of the split-drain MAGFET can be improved significantly.
